2017
DOI: 10.1109/jstqe.2017.2693020
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Mode-Locked Laser Diodes and Their Monolithic Integration

Abstract: We describe mode locked laser diodes (MLLDs) operating from 40 GHz to >1 THz. Below 40 GHz, operation at the fundamental cavity frequency is appropriate, but at higher frequencies harmonic mode-locking (HML) is used. To increase output power and control nonlinear behavior, the gain needs to be modified, and an AlGaInAs/InP structure with a three-quantumwell active layer and passive far-field reduction layer is presented. In 40-GHz all-active MLLDs, this structure offers improvements in internal loss, slope eff… Show more

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Cited by 36 publications
(20 citation statements)
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References 47 publications
(59 reference statements)
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“…The SGDBR laser has been reported previously [4], [5] and, as shown in Fig. 1(a), consists of a reflecting facet, a saturable absorber (SA), a gain section and a SGDBR reflector.…”
Section: Side-wall C-sgdbr and Pps-sgdbr Configurationsmentioning
confidence: 99%
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“…The SGDBR laser has been reported previously [4], [5] and, as shown in Fig. 1(a), consists of a reflecting facet, a saturable absorber (SA), a gain section and a SGDBR reflector.…”
Section: Side-wall C-sgdbr and Pps-sgdbr Configurationsmentioning
confidence: 99%
“…The gratings of the C-SGDBR MLLD are etched into the side-walls of a ridge waveguide as shown in in Fig. 1(b) [4], [5]. The mode-locked frequency is set by the round trip time of one period of the sampled grating (P):…”
Section: Side-wall C-sgdbr and Pps-sgdbr Configurationsmentioning
confidence: 99%
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