Mode Investigation for Hybrid Microring Lasers With Sloped Sidewalls Coupled to a Silicon Waveguide

Sui, Shao-Shuai; Tang, Mi; Yang, Yue-De; Xiao, Jin-Long; Du, Yan; Huang, Yong-Zhen

doi:10.1109/jphot.2015.2416119

Cited by 8 publications

(1 citation statement)

References 21 publications

(22 reference statements)

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“…Recently, we have reported a 16-wavelength hybrid microdisk laser array, which is only pulsed operation due to high threshold and thermal resistance [21]. Furthermore, mode characteristics of vertically Siwaveguide-coupled hybrid microring lasers with sloped sidewalls are studied, and a 19 μm radius hybrid microring laser is fabricated with a threshold current density of 3.45 kA∕cm 2 by standard lithography technique [22]. However, the operation characteristics of the microlasers are greatly influenced by the thickness of the external n-InP contacting layer surrounding the microring resonator.…”

Section: Introductionmentioning

confidence: 99%

Investigation of hybrid microring lasers adhesively bonded on silicon wafer

Sui¹,

Tang²,

Yang³

et al. 2015

Photon. Res.

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Thermal characteristics are numerically investigated for the hybrid AlGaInAs/InP on silicon microring lasers with different ring radii and widths. Low threshold current and low active region temperature rise are expected for a microring laser with a narrow ring width. Based on the thermal analysis and the 3D simulation for mode characteristics, a hybrid AlGaInAs/InP on silicon microring lasers with an inner n-electrode laterally confined by the p-electrode metallic layer is fabricated using an adhesive bonding technique. A threshold current of 4 mA is achieved for a hybrid microring laser with a radius of 20 μm and a ring width of 3.5 μm at 12°C, and the corresponding threshold current density is as low as 1 kA∕cm 2. The influence of the location of silicon waveguide on output performance is studied experimentally for improving the output coupling efficiency. Furthermore, continuous-wave electrically injected lasing up to 55°C is realized for a hybrid microring laser with a radius of 30 μm and a ring width of 3 μm.

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Section: Introductionmentioning

confidence: 99%

Investigation of hybrid microring lasers adhesively bonded on silicon wafer

Sui¹,

Tang²,

Yang³

et al. 2015

Photon. Res.

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Analytical solutions for the guided modes of rectangular silicon optical waveguides: a plane-wave approach

Ramadan

2024

Opt Quant Electron

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Marcatili’s analytical solution for the guided modes of rectangular optical waveguides (ROWGs) depends on (1) using the separation of variables (SOV) and (2) applying the paraxial approximation. It results in two classes of modes: the TE-like and the TM-like modes which are supported by these waveguides. These modes are uncoupled under low-index-contrast conditions. In the case of silicon-on-insulator (SOI) waveguides, the coupling between them can no longer be neglected. This paper extends using the SOV to find analytical modal solutions of SOI-ROWGs. It expands these solutions in quadruples of plane waves and develops a novel non-paraxial scattering model to account for the polarization coupling between these waves under high-index-contrast conditions. This model yields approximate analytical expressions of the field components of the guided modes which are the sum of major and minor Marcatili’s TE-like and TM-like modal fields. Numerical examples show excellent agreement with the field components of full-vectorial mode solvers.

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High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuits

Yin

Han

et al. 2016

J. Semicond.

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This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene (DVS-BCB) adhesive bonding method. A grating coupler is adopted to couple light from the fiber to the silicon waveguide. Light in the silicon photonic waveguide is evanescently coupled into the photodetector. The integrated photodetector structure is first simulated using the FDTD (finite difference time domain) solutions software and the simulation results show a detection efficiency of 95%. According to the simulation result, the integrated photodetector is fabricated. The measured responsivity of the fabricated integrated photodetector with a detection length of 30 μm is 0.89 A/W excluding the coupling loss between the fiber and the grating coupler and the silicon propagation loss at the wavelength of 1550 nm with a reverse bias voltage of 3 V. Measured 3-dB bandwidth is 27 GHz using the Lightwave Component Analyzer (LCA). The eye diagram signal test results indicate that the photodetector can operate at a high speed of 40 Gbit/s. The integrated photodetector is of great significance in the silicon-based optoelectronic integrated chip which can be applied to the optical communication and the super node data transmission chip of the high-performance computer.

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Mode Investigation for Hybrid Microring Lasers With Sloped Sidewalls Coupled to a Silicon Waveguide

Cited by 8 publications

References 21 publications

Investigation of hybrid microring lasers adhesively bonded on silicon wafer

Investigation of hybrid microring lasers adhesively bonded on silicon wafer

Analytical solutions for the guided modes of rectangular silicon optical waveguides: a plane-wave approach

High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuits

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