High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuits

Abstract

This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene (DVS-BCB) adhesive bonding method. A grating coupler is adopted to couple light from the fiber to the silicon waveguide. Light in the silicon photonic waveguide is evanescently coupled into the photodetector. The integrated photodetector structure is first simulated using the FDTD (finite difference time domain) solutions software and the simulation results show a detection efficiency of 95%. According to the simulation result, the integrated photodetector is fabricated. The measured responsivity of the fabricated integrated photodetector with a detection length of 30 μm is 0.89 A/W excluding the coupling loss between the fiber and the grating coupler and the silicon propagation loss at the wavelength of 1550 nm with a reverse bias voltage of 3 V. Measured 3-dB bandwidth is 27 GHz using the Lightwave Component Analyzer (LCA). The eye diagram signal test results indicate that the photodetector can operate at a high speed of 40 Gbit/s. The integrated photodetector is of great significance in the silicon-based optoelectronic integrated chip which can be applied to the optical communication and the super node data transmission chip of the high-performance computer.

Design and fabrication of wavelength tunable AWGs based on the thermo-optic effect

“…Silicon photonics [1][2][3] , as a low cost integration platform for datacom and telecom applications, has been drawing a lot of attention nowadays. Silicon on insulator (SOI) is an ideal material for separating passive or active devices [4][5][6][7][8][9] and their integration [10][11][12][13] because of its transparent optical property over the communication band. Besides, the mature CMOS technology can be directly applied to the integration of silicon photonics devices, which can lower their production cost greatly.…”