MOCVD of ZrO₂ and HfO₂ Thin Films from Modified Monomeric Precursors

Liquid-Injection MOCVD of ZrO2 Thin Films using Zirconium Bis(diethlyamido)-bis(di-tert-butylmalonato) as a Novel Precursor

“…Such low densities have been observed and discussed previously [13] for CVD films of crystalline ZrO 2. The low-temperature densification is similarly observed for our films deposited from the [Zr(O i Pr) 2 (tbaoac) 2 ] precursor, [10] although these films remained amorphous at this temperature. Hence, the densification must be primarily related to the release of impurities like hydrocarbons.…”

“…Figure 3 shows the growth-rate comparison of this novel amide hybrid precursor with an alkoxide-diketonate hybrid precursor developed previously. [10] For both precursors we obtained a kinetically controlled growth at low temperatures, a rather broad plateau in the growth rate from 450 to 600°C (mass-transport-limited range), and a decrease at high temperatures. The kinetically controlled low-temperature region can be characterized for the new precursor by an effective activation energy of 0.5 eV, which is lower than that of the alkoxide based precursor (0.75 eV).…”

“…Main reflections are observed at 2h values of around 30°, 34°, and 50°, comparable with our earlier result on [Zr(O i Pr) 2 (tbaoac) 2 ] in the same reactor. [10] Due to the lower film thickness, the peaks are broad and hence difficult to assign to a specific structure; the orthorhombic, cubic, or tetragonal structures seem compatible, and only the room-temperaturestable monoclinic structure can be excluded. These films are polycrystalline without significant preferred orientation (texture).…”

Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors

“…In the MOCVD grown films, the levels of carbon, a common impurity in this technique, are in the ranges 0.0-1.4 at.-% and 2.1-3.5 at. [45,46] The AES data show a mixture of stoichiometric and sub-stoichiometric films were grown with both precursors. This is not uncommon for metal oxide films produced by MOCVD from alkoxides [47,48] and other precursors.…”

Synthesis, structural characterization, and thermal properties of zirconium(IV) β-ketodiester complexes

“…Moreover, the majority of these compounds are oligomeric of a low volatility, due to the tendency of zirconium(IV) ions to expand their coordination sphere to numbers 6-8 and it implies the necessity to control the reactivity of zirconium alkoxides [14]. One approach is the use of bidendate ligands, such as b-diketonates, carboxylic acids, or other, which can decrease the parent alkoxides reactivity [9,13,[15][16][17][18][19][20][21][22].…”