MOCVD of InGaN‐based light emitting structures on silicon substrates with strain optimized buffer layers using long Al pre‐deposition

Abstract

GaN/InGaN multi quantum wells (MQWs) were grown on silicon (Si) substrates by Metalorganic Vapor Phase Epitaxy (MOVPE). A structure of layers consisting of AlN, AlGaN and GaN was used for subsequent deposition of the MQW structures on Si substrates. The Al pre-deposition time before growing the buffer structure and its effect on the formation of cracks was investigated. The emitted wavelength of the structure was changed by varying the thickness of the Mg-doped AlGaN electron blocking layer, by reducing the growth temperature of the MQW structure and by increasing the QW width of the structure.

The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate

“…Liu et al [18] reported that the substrate was exposed to trimethylaluminum (TMAl) for 10 s in order to prevent the formation of a Si x N y layer. Clames et al [19] reported predeposition of Al could reduce the crack in the GaN layer.…”