MOCVD of Compound Semiconductor Layers

Veuhoff, E.

doi:10.1016/b978-081551374-2.50004-1

Cited by 3 publications

(1 citation statement)

References 159 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During this same era, Arthur and Choi developed molecular beam epitaxy (MBE) at Bell Labs [5]. The ability to use epitaxial interfaces to grow designed sequences of layers of materials with known thicknesses and structure dramatically increased the repertoire of potentially available functional materials [6]. The ability to imagine sequences of structures that could actually be prepared resulted in increased theoretical activity predicting properties and potential devices from proposed nanoarchitectures.…”

Section: Introductionmentioning

confidence: 99%

Heterostructures containing dichalcogenides-new materials with predictable nanoarchitectures and novel emergent properties

Hamann¹,

Hadland²,

Johnson³

2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Heterostructures unconstrained by epitaxy have generated considerable excitement due to the discovery of emergent properties-properties not found in either constituent. Heterostructures enable the surfaces on either side of two-dimensional (2D) layers to be used to systematically investigate phenomena such as superconductivity and magnetism in the 2D limit. The ability to choose constituents facilitates the prediction of emergent properties created by the unusual coordination environments at incommensurate interfaces. There have already been many reviews on heterostructures, focusing on a variety of topics that reflect the diverse interest in this area as well as the potential for new technologies. Hence this review focuses mainly on the synthesis and structural characterization of heterostructures containing transition metal dichalcogenides (TMD). This review only briefly discusses 2D materials and TMD/TMD heterostructure devices and the performances that have been achieved. This review provides a historical context for the rapid development of this field and discusses proposed mechanisms for emergent properties. Up to now, the materials used in heterostructures have mainly been materials with 2D structures, as these compounds can be easily cleaved into ultrathin layers. This review discusses the expansion of heterostructure constituents to include materials that do not have 2D structures. Structural changes and charge redistribution between adjacent (or even more distant) layers are likely to be larger for 3D constituents than with 2D constituents based on known misfit layer compounds. Systematic changes in properties with layer thickness, layer sequences, and the identity of constituents will increase our understanding of emergent properties and how they can be optimized.

show abstract

Section: Introductionmentioning

confidence: 99%