MOCVD growth of InP by phosphine modulation

Lee, M.K.; Hu, Canbin; Lin, Ming-Chuan

doi:10.1109/iciprm.1993.380682

Cited by 1 publication

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“…3 and 4, but due to the relatively small strain in samples A and B, the differences in peak shapes between Figs Similar hillocks in Ga 1Àx In x P=GaAs with 0:388 r x r0:552 have been reported in [6], and they are a well-known problem in GaInP epitaxy [4,5,7]. However, it is possible to grow hillock-free GaInP layers using PH 3 as P precursor, if the PH 3 flow is modulated during the MOVPE growth [17]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Lankinen¹,

Knuuttila²,

Kostamo³

et al. 2009

Journal of Crystal Growth

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In x P layers are grown on GaAs/Ge substrates by metalorganic vapor phase epitaxy and studied by means of synchrotron X-ray topography and high-resolution X-ray diffractometry. Misfit dislocations (MDs) in Ga 0:5094 In 0:4906 P epilayers having a þ 3:8 Â 10À4 lattice mismatch to GaAs/Ge substrates at room temperature (RT) are observed. Ga 0:4995 In 0:5005 P epilayers having a lattice mismatch of À3:5 Â 10 À4 to the GaAs/Ge substrates at RT are shown to be free of MDs, which is explained by the different linear thermal expansion coefficient of the epilayer from that of the substrate material compensating the lattice mismatch at the growth temperature of 610 3 C. The Matthews-Blakeslee model for critical thickness was matched to the observed MD pattern in the samples. Additionally, faceted InP hillocks and strain fields beneath them are observed within the GaInP layers. The observed MDs, which are most likely of the 60 3 mixed /1 0 1Sf1 1 1g type, originate at the hillocks.

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