MOCVD growth and thermal stability analysis of 1.2 µm InGaAs/GaAs multi quantum well structure

Chen, Xiangliu; Xiao, Yao; Yang, Cheng; Zhang, Zhicheng; Gou, Yudan; Wang, Jun

doi:10.1016/j.jallcom.2022.166173

Cited by 8 publications

(2 citation statements)

References 34 publications

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“…InGaAs is selected as the quantum well material to achieve 1083 nm. Indium with a larger size can strongly hinder the propagation of epitaxy defects and effectively suppress the growth rate of dark line defects [23]. InGaAs and GaAs may have a lattice distortion greater than 2% to achieve a 1 µm light emission, and dislocation defects are prone to occur in this case [24].…”

Section: Laser Design Simulation and Fabricationmentioning

confidence: 99%

A 1083 nm Narrow-Linewidth DFB Semiconductor Laser for Quantum Magnetometry

Wang

et al. 2023

Photonics

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A 1083 nm laser, corresponding to a characteristic spectral line of 3He 23S1−–23P, is the core light source for spin-exchange optical pumping-free technology, and thus has important developmental significance. In this paper, precise wavelength 1083.34 nm semiconductor lasers with 285 mW output power, −144.73 dBc/Hz RIN noise and 30.9952 kHz linewidth have been successfully achieved via reasonable chips design, high-quality epitaxial growth process and ultra-low reflectivity coating fabrication. All the results show the highest output power and ultra-narrow linewidth of the single-frequency 1083 nm DFB semiconductor laser achieved in this paper, which can fully satisfy the requirement of quantum magnetometers.

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Section: Laser Design Simulation and Fabricationmentioning

confidence: 99%

A 1083 nm Narrow-Linewidth DFB Semiconductor Laser for Quantum Magnetometry

Wang

et al. 2023

Photonics

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“…Moreover, its bandgap energy can be tuned to the range appropriate for several applications, such as long wavelength emitters [ 17 ], detectors [ 18 ], and spintronic-related devices [ 17 ], by alloying it with other elements such as In, Al, Sb, and N to form InGaAs, AlGaAs, GaAsSb, and GaAsN, respectively, etc. These ternary alloys, InGaAs, AlGaAs, GaAsSb, and GaAsN, have been successfully grown by metal-organic chemical vapor deposition (MOCVD) [ 19 , 20 , 21 , 22 ] and by molecular beam epitaxy (MBE) [ 23 , 24 , 25 , 26 ]. Among its diverse applications, GaAs-based material can be used as a substrate for the epitaxial growth technology of other III-V semiconductors, including InGaAs, InGaN, GaAsN, and others.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

et al. 2022

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A systematic investigation of the changes in structural and optical properties of a semi-insulating GaAs (001) wafer under high-energy electron irradiation is presented in this study. GaAs wafers were exposed to high-energy electron beams under different energies of 10, 15, and 20 MeV for absorbed doses ranging from 0–2.0 MGy. The study showed high-energy electron bombardments caused roughening on the surface of the irradiated GaAs samples. At the maximum delivered energy of 20 MeV electrons, the observed root mean square (RMS) roughness increased from 5.993 (0.0 MGy) to 14.944 nm (2.0 MGy). The increased RMS roughness with radiation doses was consistent with an increased hole size of incident electrons on the GaAs surface from 0.015 (0.5 MGy) to 0.066 nm (2.0 MGy) at 20 MeV electrons. Interestingly, roughness on the surface of irradiated GaAs samples affected an increase in material wettability. The study also observed the changes in bandgap energy of GaAs samples after irradiation with 10, 15, and 20 MeV electrons. The band gap energy was found in the 1.364 to 1.397 eV range, and the observed intense UV-VIS spectra were higher than in non-irradiated samples. The results revealed an increase of light absorption in irradiated GaAs samples to be higher than in original-based samples.

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Effects of growth temperature and rapid thermal annealing on luminescence properties of InGaAs/GaAs multiple quantum wells

Wang

et al. 2022

Journal of Luminescence

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MOCVD growth and thermal stability analysis of 1.2 µm InGaAs/GaAs multi quantum well structure

Cited by 8 publications

References 34 publications

A 1083 nm Narrow-Linewidth DFB Semiconductor Laser for Quantum Magnetometry

A 1083 nm Narrow-Linewidth DFB Semiconductor Laser for Quantum Magnetometry

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

Effects of growth temperature and rapid thermal annealing on luminescence properties of InGaAs/GaAs multiple quantum wells

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