A 1083 nm Narrow-Linewidth DFB Semiconductor Laser for Quantum Magnetometry

Abstract

A 1083 nm laser, corresponding to a characteristic spectral line of 3He 23S1−–23P, is the core light source for spin-exchange optical pumping-free technology, and thus has important developmental significance. In this paper, precise wavelength 1083.34 nm semiconductor lasers with 285 mW output power, −144.73 dBc/Hz RIN noise and 30.9952 kHz linewidth have been successfully achieved via reasonable chips design, high-quality epitaxial growth process and ultra-low reflectivity coating fabrication. All the results show the highest output power and ultra-narrow linewidth of the single-frequency 1083 nm DFB semiconductor laser achieved in this paper, which can fully satisfy the requirement of quantum magnetometers.

Correction: Wu et al. A 1083 nm Narrow-Linewidth DFB Semiconductor Laser for Quantum Magnetometry. Photonics 2023, 10, 934

“…In the published publication [1], there was an error regarding the affiliation(s) for **Mengying Wu, Haiyang Yu, Wenyu Wang, Shaojie Li, Yulian Cao and Jianguo Liu**.…”