Mobility of Electrons in Germanium-Silicon Alloys

Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

“…The inset shows that peak mobility decreases as T −0.86 over the temperature range tested. This temperature dependence is significantly reduced from what is expected for optical phonon scattering (T −1.5 ) [14], and is closer to the dependence of alloy disorder scattering on temperature was found by Glicksman in Germanium-Silicon alloys [16] after removal of ionised defect and phonon mobility limits. The peak mobility temperature dependence is therefore further evidence in favour of alloy scattering being the mobility limiting factor in these Al 0.85 Ga 0.15 N / Al 0.7 Ga 0.3 N devices.…”

Galvanomagnetic effects and alloy scattering in n‐type Pb1–xSnxTe at low temperatures

“…4 x 10'' z = 0.13) is almost constant below 40 K and it gradually decreases with increasing temperature above 40 K. This indicates that the carriers are strongly degenerate electrons at low temperatures and the thermally excited carriers are added at higher temperatures in this sample. On the other hand, in the case of the samples with larger carrier concentration the Hall coefficients are almost constant in the whole range below room temperature.…”

Conductivity and thermoelectric power of trigonal SexTe1−x single crystals

“…Since several mechanisms contribute to the scattering of the carriers in the mixed crystals [19], no exact statement on T is possible. Here T = 0 is assumed, which is correct for deformation potential scattering [23] and also for alloy disorder scattering [24]. The hole concentration pa thus obtained is plotted versus alloy composition (at %Se) - Fig.…”