2008
DOI: 10.1016/j.sse.2007.11.007
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Mobility model for compact device modeling of OTFTs made with different materials

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Cited by 94 publications
(48 citation statements)
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“…Mobility, as well as the characteristic temperature and density of localized states in the P3HT layer were extracted using the unified model and extraction method, UMEM, previously repoprted by us, [12,13]. Extracted parameters, were used to simulate the devices in ATLAS 1 simulator using the procedure indicated in [14]. Stability of devices working in ambient conditions was also analyzed.…”
Section: Introductionmentioning
confidence: 99%
“…Mobility, as well as the characteristic temperature and density of localized states in the P3HT layer were extracted using the unified model and extraction method, UMEM, previously repoprted by us, [12,13]. Extracted parameters, were used to simulate the devices in ATLAS 1 simulator using the procedure indicated in [14]. Stability of devices working in ambient conditions was also analyzed.…”
Section: Introductionmentioning
confidence: 99%
“…In frame of the assumption used in [45][46], the developed expression of the field effect mobility is given by:…”
Section: Modeling the Temperature Dependence Of The Field Effect Mobimentioning
confidence: 99%
“…The modeling of the current-voltage characteristics (output and transfer characteristics) of the fabricated DBP-TFTs was performed using the following expression [24,[45][46]:…”
Section: Modeling Of Current-voltage Characteristicsmentioning
confidence: 99%
“…In the disordered amorphous structure of organic materials, the charge transport is occurred by variable range hopping (VRH) of charge carriers between strongly localized states [33][34][35][36][37].…”
Section: Modeling Of the Transfer Characteristics Via Variable Range mentioning
confidence: 99%