Mobility in single crystal Bi2Se3

Woollam, John A.; Beale, H.A.; Spain, Ian L.

doi:10.1016/0375-9601(72)90908-5

Cited by 22 publications

(7 citation statements)

References 4 publications

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“…A field dependence of R, might also arise from a second type of carriers. The increase of R , (B 11 c ) with magnetic field, which is found for all samples, could be explained by two types of carriers of different sign of electrical charge [9]. As weakly doped Bi,Se, shows intrinsic conduction an energy gap must exist, proving that bismuth selenide is a semiconductor but disproving the presence of electrons and holes in ordinary energy bands in a crystal of n-type Bi,Se, a t 4.2 K. It might be possible, that impurity band conduction causes this magnetic field dependence of R,, which is not yet understood.…”

Section: Analysis and Discussionmentioning

confidence: 59%

Conduction Band Parameters of Bi₂Se_e from Shubnikov‐de Haas Investigations

Köhler

1973

Physica Status Solidi (b)

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The oscillatory magnetoresistance (Shubnikov-de Haas effect) was observed on n-type B&Se, single crystals between 1.6 and 4.2 K. The electron concentrations ranged from about 4 x 101' to 4 x lo1@ ~m -~. Stationary magnetic fields u p to 10.5 T were available.The angular dependence of the Shubnikov-de Haas periods revealed an almost rotational symmetry of the Fermi surface around the k,-axis with a small amount of trigonal warping.Perpendicular to the k,-axis for k, = 0 a parabolic e ( k i ) relation is found, parallel to the k,-axis a n increasing nonparabolicity is evaluated. Only above lOl0 electrons/cm3 the deviation of the shape of the Fermi surface from that of an ellipsoid of rotational symmetry becomes significant. The cyclotron mass m, perpendicular to the k,-axis (B j j c ) is determined to be 0.124 m,, in the whole concentration range. Fermi energies are evaluated up to 160 meV. The single-valley model for the lowest conduction band of Bi,Se, is con. firmed.Der oszillatorische Anteil der magnetischen Widerstandsanderung (Shubnikov-de HaasEffekt) wurde a n n-leitenden Bi,Se,-Einkristallen zwischen 1,6 und 4,2 K beobachtet.

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Section: Analysis and Discussionmentioning

confidence: 59%

Conduction Band Parameters of Bi₂Se_e from Shubnikov‐de Haas Investigations

Köhler

1973

Physica Status Solidi (b)

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“…Note that one hole per unit cell is 7:08 Â 10 21 =cm 3 . work [33] found a mobility of 175 cm 2 =V-sec at essentially the same carrier concentration. An earlier work on much more lightly doped p-type samples [34] found substantially higher mobilities, so the assumption that mobility increases at these concentrations is a reasonable one.…”

Section: Calculation Of Optimal Doping Ranges and Potential Perfomentioning

confidence: 83%

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

Parker

Singh

2011

Phys. Rev. X

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We present an analysis of the potential thermoelectric performance of hole-doped Bi 2 Se 3 , which is commonly considered to show inferior room temperature performance when compared to (2008).]) the material may show optimized ZT values of unity or more in the 300-500 K temperature range and thus be suitable for cooling and moderate temperature waste heat recovery and thermoelectric solar cell applications. Central to this conclusion are the larger band gap and the relatively heavier valence bands of Bi 2 Se 3 .

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“…Predominance of selenium vacancies makes it very difficult to prepare p-type Bi 2 Se 3 and in spite of the considerable attention devoted to this compound and its solid solutions, 2,3 there is little information about p-type materials based on Bi 2 Se 3 . 4,5 According to Ref. 6, there is a noticeable decrease in electron concentration upon alloying Bi 2 Se 3 with Sb 2 Se 3 , thanks to the suppression of native defects.…”

Section: Introductionmentioning

confidence: 99%

n -type to p-type crossover in quaternary BixSbyPbzSe3 single crystals

Kašparová

Drašar

Krejčová

et al. 2005

Journal of Applied Physics

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We report on the preparation and some physical properties of a quaternary system based on Bi 2 Se 3 codoped with Sb and Pb. Single-crystal samples were prepared using the Bridgman technique and were characterized by measurements of the lattice parameters, electrical resistivity, Hall coefficient, Seebeck coefficient, and thermal conductivity. Atomic emission spectroscopy was used to find the concentration profiles of Sb and Pb along the single-crystalline ingots. Progressive codoping of the Bi 2 Se 3 crystal lattice with Sb and Pb leads to a crossover of the initially n-type conduction to that of the p type. It is assumed that both Sb and Pb enter the Bi sublattice. Physical properties as well as the change in the dominant carrier type are discussed.

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Mobility in single crystal Bi2Se3

Cited by 22 publications

References 4 publications

Conduction Band Parameters of Bi₂Se_e from Shubnikov‐de Haas Investigations

Conduction Band Parameters of Bi₂Se_e from Shubnikov‐de Haas Investigations

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

n -type to p-type crossover in quaternary BixSbyPbzSe3 single crystals

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Mobility in single crystal Bi2Se3

Cited by 22 publications

References 4 publications

Conduction Band Parameters of Bi2See from Shubnikov‐de Haas Investigations

Conduction Band Parameters of Bi2See from Shubnikov‐de Haas Investigations

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

n -type to p-type crossover in quaternary BixSbyPbzSe3 single crystals

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Conduction Band Parameters of Bi₂Se_e from Shubnikov‐de Haas Investigations

Conduction Band Parameters of Bi₂Se_e from Shubnikov‐de Haas Investigations