Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire

Hu, Weiguo; Ma, Bei; Li, Dabing; Narukawa, Mitsuhisa; Miyake, Hideto; Hiramatsu, Kazumasa

doi:10.1016/j.spmi.2009.09.008

Cited by 14 publications

(8 citation statements)

References 16 publications

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“…These problems can be overcome by utilizing a thin layer of aluminium nitride (AlN) as Interlayer (IL) improves the heterostructure interface quality as well as reduces dislocations and alloy disorders during the growth of AlGaN-based HEMT heterostructures. And also, AlN-IL acts as a barrier by minimizing the charge carrier tunneling [5,9,[11][12][13][14][15][16][17]. Based on earlier reports, we have reported a better quality AlGaN layers grown on GaN/sapphire templates using MOCVD [18][19][20].…”

Section: Introductionmentioning

confidence: 77%

“…In addition, the 2DEG sheet concentration of samples I, III and IV is almost independent of temperature. In contrast, sample II has a temperature range from 200 K -350 K, which suggests the involvement of some additional channel conductivity [14]. These results directly indicate that the thin AlN interfacial layer effectively suppresses carrier penetration into the AlGaN layer by increasing conduction band offset (Ec) and enhances the confinement of the 2DEG in the GaN channel of the AlGaN/GaN HEMT structures.…”

Section: Table 1 Structural Properties Of Algan/gan Heterostructures ...mentioning

confidence: 88%

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Influence of AlN interlayer on AlGaN/GaN heterostructures grown by metal organic chemical vapour deposition

Ramesh

Arivazhagan

Prabakaran

et al. 2021

Materials Chemistry and Physics

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Section: Introductionmentioning

confidence: 77%

Section: Table 1 Structural Properties Of Algan/gan Heterostructures ...mentioning

confidence: 88%

Influence of AlN interlayer on AlGaN/GaN heterostructures grown by metal organic chemical vapour deposition

Ramesh

Arivazhagan

Prabakaran

et al. 2021

Materials Chemistry and Physics

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“…Comparison curves of the mobility model (solid lines) with experimental data (symbols) at different temperature ranges: a) low temperatures [ 41,45 ] and b) high temperatures. [ 46 ] …”

Section: Model Descriptionmentioning

confidence: 99%

“…As shown in Figure 3, the mobility model shown in Equation ( 12) is verified by the measurements at different temperatures in refs. [41,45,46].…”

Section: Charge Transportationmentioning

confidence: 99%

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Wu,

Yao,

Liu

et al. 2024

Physica Status Solidi (a)

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In this work, an extended temperature current–voltage (I–V) model for AlGaN/GaN high electron mobility transistors (HEMTs) is proposed. Since there is no carrier freeze‐out effect in GaN HEMTs, the current density, switching characteristics, and heat dissipation performance are significantly improved with the decrease in temperature. The threshold voltage drift phenomenon can be accurately described at various temperatures by the trapping effect control potential model. Based on Matthiessen's law, the applicable temperature range of the mobility model is further extended. At cryogenic temperatures, the saturation current, saturation velocity, and sub‐threshold swing of the device tend to saturate as well as be temperature‐independent, which can be accurately modeled by using the equivalent temperature and applying the crucial temperature to quantify the turning point. Furthermore, the SHE modeling incorporates the temperature dependence of the material's thermal conductivity. The accuracy of the model is verified by experimental data at low (4.2–300 K) and high (298–773 K) temperatures. The proposed model overcomes the limitations of existing models applied at wide ambient temperatures.

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“…III-nitride, wide bandgap, semiconductor materials are important for microelectronics applications, such as high electron mobility transistors (HEMTs) which consist of complex heterostructures of compound nitride materials (Wu et al, 2001; Mishra et al, 2002; Hu et al, 2009; Liu et al, 2017). To optimize device performance, which relies on accurate stoichiometry and interfacial quality, the structure and chemistry of the heterostructure need to be understood at the atomic level.…”

Section: Introductionmentioning

confidence: 99%

Understanding the Nature of Crystallographic Bonds by Establishing the Correlation between Ion-Pair Chemistry and Their Separation in Detector Space

Licata

Mazumder

2022

Microsc Microanal

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The occurrence of multi-hit events and the separation distance between multi-hit ion pairs field evaporated from III-nitride semiconductors can potentially provide insights on neighboring chemistry, crystal structure, and field conditions. In this work, we quantify the range of variation in major III-N and III-III ion-pair separation to establish correlations with bulk composition, growth method, and ion-pair chemistry. The analysis of ion-pair separation along the AlGaN/GaN heterostructure system allows for comparison of Ga-N and Ga-Ga ion-pair separation between events evaporated from pure GaN and Al0.3Ga0.7N. From this, we aim to define a relative measure for the bond length of ion pairs within an AlGaN/GaN heterostructure. The distributions of pair separation revealed a distinct bimodal behavior that is unique to Al-N2+ ion pairs, suggesting the occurrence of both co-evaporation and molecular dissociation. Finally, we demonstrated that the two modes of ion-pair events align with the known variation in the surface electric field of the AlGaN(0001) structure. These findings demonstrate the utility of atom probe tomography in studying the crystallographic nature of nitride semiconductors.

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Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire

Cited by 14 publications

References 16 publications

Influence of AlN interlayer on AlGaN/GaN heterostructures grown by metal organic chemical vapour deposition

Influence of AlN interlayer on AlGaN/GaN heterostructures grown by metal organic chemical vapour deposition

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Understanding the Nature of Crystallographic Bonds by Establishing the Correlation between Ion-Pair Chemistry and Their Separation in Detector Space

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