Mobility and strain effects for &lt;100&gt; and &lt;110&gt; oriented silicon and SiGe transistor channels

Flachowsky, S.; Herrmann, T.; Höntschel, J.; Illgen, R.; Ong, Shao Jin; Wiatr, Maciej; Baldauf, Tim; Klix, W.; Stenzel, R.

doi:10.1109/ulis.2012.6193343

Cited by 2 publications

(3 citation statements)

References 5 publications

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“…It can be seen that the 30-nm nFET linear mobility is ∼68% of its long channel counterpart, while the 30-nm pFET exhibits a higher mobility value of 83% compared with its long-channel reference. This meets the expectation, that the combination of CPEN liner and SiGe S/D stronger enhances the short-channel mobility of the pFET due to strain engineering in relative comparison to the nFET with TPEN liner [3]. The short-channel mobility drops to more than 1/2 of its low-field value when finally reaching a saturation minimum at high V ds .…”

Section: Inversion Channel Mobilitysupporting

confidence: 85%

“…In addition to the embedded SiGe source/drain (S/D) contact regions on pFET devices, stress liner with high intrinsic tensile and compressive strain values in the order of 1.5 and −3.5 GPa, respectively, are used over the nFET and pFET transistor gates [3]. Although high strain values are achieved in short-channel devices, the mobility loss caused by vertical field enhancement due to the downscaling of the device can only be partly recovered.…”

Section: Introductionmentioning

confidence: 99%

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Mobility Investigations on Strained 30-nm High-<inline-formula> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula> Metal Gate MOSFETs by Geometrical Magnetoresistance Effect

Beister¹,

Wachowiak²,

Baburske

et al. 2015

IEEE Trans. Electron Devices

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In this paper, we present mobility investigations of strained nMOS and pMOS short-channel transistors with dimensions down to 30-nm gate length. Using the geometrical magnetoresistance (MR) effect, carrier mobility of electrons and holes in the inversion channel of a recent state-of-the-art CMOS technology is presented from linear to saturation operation conditions. The MR effect allows for a more direct access to the carrier mobility compared with the conventional current/voltage and capacitance/voltage mobility derivation methods, in which series resistance, inversion charge density, and effective channel length are necessary to extract the mobility values of the shortchannel devices. In another way, the MR effect can help to disentangle the performance gain of the strained state-of-the art devices to changes in channel mobility or device connection, e.g., series resistance effects.

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Section: Inversion Channel Mobilitysupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Mobility Investigations on Strained 30-nm High-<inline-formula> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula> Metal Gate MOSFETs by Geometrical Magnetoresistance Effect

Beister¹,

Wachowiak²,

Baburske

et al. 2015

IEEE Trans. Electron Devices

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show abstract

“…sSOI wafers and benefits for NFETs of biaxial strain wafer level have been widely discussed in the literature [12,13], this is not the case for compressive strained SiGe option.…”

Section: Strain Options For Planar Fdsoimentioning

confidence: 99%