“…First, the cations necessary for nucleic acid selfassembly would, if present during fabrication, destroy the electrical properties of most semiconductor devices. 34 Second, NAN assembly occurs at, or within a few kT of, thermodynamic equilibrium, under which conditions the defect percentage is high, [35][36][37] greater than one in 10 2 , and scales poorly with size. 38,39 The intrinsic defectivity of NAN makes it a poor choice for leadingedge nanoelectronic fabrication, in which defect levels are, and must be, routinely less than one in 10 12 .…”