2017
DOI: 10.1016/j.electacta.2017.09.186
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Mo6+ Doped BiVO4 with improved Charge Separation and Oxidation Kinetics for Photoelectrochemical Water Splitting

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Cited by 60 publications
(29 citation statements)
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“…RHE and at 420 nm showed an efficiency of 19 %, while the other samples do not exceed 13 %. Despite the IPCE values were obtained at about 400 mV lower bias potential, they were comparable with those obtained with other non‐structured Mo‐doped BiVO 4 samples reported in the literature under front‐side illumination (Table ) . In other words, the spray‐coated Mo : BiVO 4 photoanodes have a similar efficiency at a significant lower externally applied driving force.…”
Section: Resultssupporting
confidence: 87%
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“…RHE and at 420 nm showed an efficiency of 19 %, while the other samples do not exceed 13 %. Despite the IPCE values were obtained at about 400 mV lower bias potential, they were comparable with those obtained with other non‐structured Mo‐doped BiVO 4 samples reported in the literature under front‐side illumination (Table ) . In other words, the spray‐coated Mo : BiVO 4 photoanodes have a similar efficiency at a significant lower externally applied driving force.…”
Section: Resultssupporting
confidence: 87%
“…BiVO 4 has been previously prepared using various techniques such as electrodeposition, sputter deposition and dip, spin‐ or spray‐coating of suitable precursor materials . Spray‐coating is not dependent on the electrical conductivity of a given material and hence homogeneous films can be prepared on large sample areas …”
Section: Introductionmentioning
confidence: 99%
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“…164 eV and 159 eV, respectively, which are the characteristic peaks of Bi 3+ species. 12,18 The signals of V2p (Fig. 3b) are located at ca.…”
Section: Chemical States and Optical Absorptionmentioning
confidence: 99%
“…10 Doping transition metal ions have been proved to be an effective way to overcome the limitation of charge separation and migration. 11,12 Especially, among various metal ions, Mo is reported to be the better one to enhance the PEC activity of BiVO 4 . 13 Moreover, in order to accelerate the surface reaction kinetics, decorating adequate oxygen evolution cocatalysts on semiconductors is well accepted, which can effectively lower the activation energy of water oxidation reaction and further decrease the rate of charge recombination.…”
Section: Introductionmentioning
confidence: 99%