Mo1–xWxSe2-Based Schottky Junction Photovoltaic Cells

Yi, Sum Gyun; Kim, Sung Hyun; Park, Sung Jin; Oh, Dae Kyu; Choi, Heekyung; Lee, Nara; Choi, Young Jai; Yoo, Kyung Hwa

doi:10.1021/acsami.6b11768

Cited by 24 publications

(21 citation statements)

References 46 publications

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“…Under illumination and without external bias ( V ds = 0), the built‐in electric field separates the photogenerated electron–hole pairs, thus resulting in a measurable photocurrent (short‐circuit current, I sc ). The carriers of opposite polarities in distinct parts of the device accumulate with the circuit opening, and thus a voltage is generated (open circuit voltage, V oc ) …”

Section: Optoelectronic Applications Of Vdwhsmentioning

confidence: 99%

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Zhou

Jing

et al. 2018

Adv Funct Materials

321

217

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Van der Waals heterostructures (vdWHs) based on 2D layered materials with selectable materials properties pave the way to integration at the atomic scale, which may give rise to fresh heterostructures exhibiting absolutely novel physics and versatility. This feature article reviews the state-of-the-art research activities that focus on the 2D vdWHs and their optoelectronic applications. First, the preparation methods such as mechanical transfer and chemical vapor deposition growth are comprehensively outlined. Then, unique energy band alignments generated in 2D vdWHs are introduced. Furthermore, this feature article focuses on the applications in light-emitting diodes, photodetectors, and optical modulators based on 2D vdWHs with novel constructions and mechanisms. The recently reported novel constructions of the devices are introduced in three primary aspects: light-emitting diodes (such as single defect light-emitting diodes, circularly polarized light emission arising from valley polarization), photodetectors (such as photo-thermionic, tunneling, electrolyte-gated, and broadband photodetectors), and optical modulators (such as graphene integrated with silicon technology and graphene/hexagonal boron nitride (hBN) heterostructure), which show promising applications in the nextgeneration optoelectronics. Finally, the article provides some conclusions and an outlook on the future development in the field.WSe 2 /MoS 2 along the [001] zone axis in Figure 1c demonstrates that in this specific hetero-bilayer structure, the two hexagonal reciprocal lattices are rotated by 12.5° with respect to each layer without obvious lattice strain, resulting in moiré fringes with a spatial periodicity on the order of four to six times the lattice constants of each layer. [76] The atomically sharp interface of the heterostructure can be obtained by this stacking process confirmed by the high-resolution cross-sectional scanning transmission electron microscope image of the heterostructure (Figure 1d). Furthermore, the complex 2D vdWHs with more stacking layers can be realized by this mechanical transfer process.Mechanical transfer process provides a lot of flexibility in constructing diverse 2D vdWHs with various materials which may give rise to fresh physical properties, it is not scalable, which is imperative for further practical applications in electronics and optoelectronics. Alternatively, the bottom-up method such as direct CVD synthesis of 2D vdWHs has been successful in synthesizing graphene-or transition metal dichalcogenide (TMD)-based vdWHs, [77][78][79] which shows promising applications in scalable production. CVD GrowthCVD growth has shown booming development in the last decades such as the CVD growth of graphene [80,81] and TMDs, [82,83] and has been employed for synthesizing 2D vdWHs recently. [84] The most used method for CVD growth of 2D vdWHs is that evaporating the target sources such as WS 2 , WSe 2 , MoS 2 , MoSe 2 . Xu and co-workers [65] employed the mixture of WSe 2 and MoSe 2 powder as sources and obtained ...

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Section: Optoelectronic Applications Of Vdwhsmentioning

confidence: 99%

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Zhou

Jing

et al. 2018

Adv Funct Materials

321

217

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“…We will demonstrate that TMDC alloys host a tunable band gap and CB/VB levels, beneficial for many applications. 65 In these systems, both the Mo/W ratio and distribution are crucial and define the properties of the crystal. 22 It is therefore essential to understand their surface conductivity down to the nanometer scale.…”

Section: Resultsmentioning

confidence: 99%

Local Conduction in Mo_xW_1–xSe₂: The Role of Stacking Faults, Defects, and Alloying

Bampoulis

Sotthewes

Siekman

et al. 2018

ACS Appl. Mater. Interfaces

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Here, we report on the surface conductivity of WSe2 and MoxW1–xSe2 (0 ≤ x ≤ 1) crystals investigated with conductive atomic force microscopy. We found that stacking faults, defects, and chemical heterogeneities form distinct two-dimensional and one-dimensional conduction paths on the transition metal dichalcogenide surface. In the case of WSe2, in addition to step edges, we find a significant amount of stacking faults (formed during the cleaving process) that strongly influence the surface conductivity. These regions are attributed to the alternation of the 2H and 3R polytypism. The stacking faults form regular 2D patterns by alternation of the underlying stacking order, with a periodicity that varies significantly between different regions and samples. In the case of MoxW1–xSe2, its conductivity has a localized nature, which depends on the underlying chemical composition and the Mo/W ratio. Segregation to W-rich and Mo-rich regions during the growth process leads to nonuniform conduction paths on the surface of the alloy. We found a gradual change of the conductivity moving from one region to the other, reminiscent of lateral band bending. Our results demonstrate the use of C-AFM as a nanoscopic tool to probe the electrical properties of largely inhomogeneous samples and show the complicated nature of the surface conductivity of TMDC alloys.

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“…Optical absorbers play a key role in a variety of applications such as photodetectors, 1 microbolometers, 2 thermal imagers, 3 and solar energy conversion. 4,5 At optical frequencies, narrowband optical absorbers based on Fabry-Perot cavities 6,7 have been used for resonant cavity-enhanced photodetectors and similar devices. However, Fabry-Perot cavity-based absorbers are not very thin compared to the wavelength of light and are often narrowband or highly sensitive to the angle of incidence.…”

mentioning

confidence: 99%

Ultrathin polarization-insensitive wide-angle broadband near-perfect absorber in the visible regime based on few-layer MoS2 films

Zhang

Liu

et al. 2017

Applied Physics Letters

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We report the design, characterization, and experimental demonstration of a broadband nearperfect absorber in the visible regime based on strong interference in ultrathin molybdenum disulfide films obtained by the spin-coating method. The absorber is polarization-insensitive, and the absorption peak maintains a high value for large angles of incidence, which provides more efficient absorption for nonpolarized or oblique incident beams. The experimental results show that the absorption can reach more than 87% between 400 nm and 640 nm, which is in reasonable agreement with the simulated results. This work may offer a further step in the development of solar absorption-based nano-optoelectronic devices. Published by AIP Publishing.

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Mo_1–xW_xSe₂-Based Schottky Junction Photovoltaic Cells

Cited by 24 publications

References 46 publications

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Local Conduction in Mo_xW_1–xSe₂: The Role of Stacking Faults, Defects, and Alloying

Ultrathin polarization-insensitive wide-angle broadband near-perfect absorber in the visible regime based on few-layer MoS2 films

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Mo1–xWxSe2-Based Schottky Junction Photovoltaic Cells

Cited by 24 publications

References 46 publications

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Local Conduction in MoxW1–xSe2: The Role of Stacking Faults, Defects, and Alloying

Ultrathin polarization-insensitive wide-angle broadband near-perfect absorber in the visible regime based on few-layer MoS2 films

Contact Info

Product

Resources

About

Mo_1–xW_xSe₂-Based Schottky Junction Photovoltaic Cells

Local Conduction in Mo_xW_1–xSe₂: The Role of Stacking Faults, Defects, and Alloying