Mn2+ Concentration Effect on the Optical Properties of Zn2SiO4 : Mn Phosphors

Barthou, Carlos; Benoı̂t, Jean-Pierre; Bénalloul, P.; Morell, A.

doi:10.1149/1.2054759

Cited by 255 publications

(124 citation statements)

References 4 publications

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“…Phosphors P1 and P39 are the commercial lamp and CRT phosphors. The emission is in the form of a narrow band around 524 nm with a 44 nm half-width and decay time of the order of 25 ms. All these parameters depend to some extent on the Mn 2þ concentration [4]. The excitation spectrum consists of a broad band ranging from 220-280 nm with a maximum at 243 nm.…”

Section: Introductionmentioning

confidence: 99%

Combustion Synthesis of the Zn2SiO4:Mn Phosphor

Bhatkar

Omanwar

Moharil

2002

phys. stat. sol. (a)

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Section: Introductionmentioning

confidence: 99%

Combustion Synthesis of the Zn2SiO4:Mn Phosphor

Bhatkar

Omanwar

Moharil

2002

phys. stat. sol. (a)

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“…The former is attributed to ZnO or/and SiO 2 defects such as oxygen vacancy (V o ), zinc interstitials (Zn i ), oxygen interstitials (O i ) or/and other reasons [14,15]. The latter has been reported and discussed in the previous studies [8,16,17]. For example, the NIR emission around 670-740 nm has been assigned to be related to V o and Zn i in some reports [16] while the origin of the peak at 760 nm is attributed to energy transfer from Zn 2 SiO 4 particles to NBOHs interface defects in some others [4,5,7,18].…”

Section: Optical Propertiesmentioning

confidence: 87%

“…For example, the NIR emission around 670-740 nm has been assigned to be related to V o and Zn i in some reports [16] while the origin of the peak at 760 nm is attributed to energy transfer from Zn 2 SiO 4 particles to NBOHs interface defects in some others [4,5,7,18]. Tu Nguyen et al have explained the NIR emission at 730 nm as the result of the energy transition from NBOHs to Zn i or V o states in Zn 2 SiO 4 particles [17]. This suggests that the origin of NIR emission (around 740 nm) could be related to energy transfer from NBOHs interface defects to defect states in Zn 2 SiO 4 particles.…”

Section: Optical Propertiesmentioning

confidence: 99%

NEAR INFRARED – EMITTING Zn2SiO4 POWDERS PRODUCED BY HIGH-ENERGY PLANETARY BALL MILLING TECHNIQUE

Vien¹

2018

JST

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The near infrared-emitting Zn 2 SiO 4 powders were produced by high-energy planetary ball milling of ZnO and SiO 2 powders followed by annealing in air environment and at different temperatures. The surface morphology, crystal structure, chemical composition and optical properties of the obtained samples were investigated by means of field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence measurements (PL) at room temperature. The analysis indicates the formation of Zn 2 SiO 4 phase with annealing temperature of 1250 C. The size of Zn 2 SiO 4 nanoparticles depends strongly on annealing temperature. Photoluminescence investigation reveals that the optimal annealing temperature for almost only near-infrared emission ( 740 nm) is 1250 o C. The origin of this peak can be attributed to the energy transfer from non-bridging oxygen hole centers (NBOHs) to zinc interstitial (Zn i ) and oxygen vacancy (V o ) states in the Zn 2 SiO 4 host lattice. These results demonstrate that we might be able to produce the Zn 2 SiO 4 powders for applications in high CRI white light emitting diodes by a simple and low-cost method.

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“…For example, the luminescence lifetime of the Mn 2+ emission in ZnS:Mn 2+ decreases and the emission shifts to longer wavelengths when Mn 2+ pairs are formed. This is due to relaxation of the spin selection rule for the optical transition through the magnetic interaction between the ions [11][12][13][14]. In oxide nanocrystals (e.g.…”

Section: Dopant Pair-state Calculationsmentioning

confidence: 99%

Synthesis, simulation & spectroscopy: physical chemistry of nanocrystals

Suyver

2003

Spectroscopy of Systems With Spatially Confined Structures

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Experiments on nanocrystalline semiconductors form a wide and rapidly expanding field of research. This chapter concentrates on two very different topics within this field. In the first part, pair formation of dopant ions in nanocrystals is discussed. After a general introduction on the influence of pair formation on the luminescence properties, pair formation in nanocrystals is discussed. Due to a difference between the connectivity for sites in the bulk and at the surface, the fraction of dopant pairs depends on the crystallite size. Simulations of the statistical distribution of dopant pair states in a nanocrystal as a function of crystal structure, size and dopant concentration are presented. A closed form approximation for the results of the simulations is derived and the validity is tested. The work presented can be used to estimate dopant pair concentrations in the case of random substitution or a lower limit for the pair concentration if preferential pair formation occurs.The second part of the chapter discusses the luminescence of a single nanocrystalline semiconductor particle. The absence of inhomogeneous broadening and other ensemble averaging effects has provided exciting new insight into the luminescence and quenching mechanisms. The linewidth, blue shift and bleaching of the luminescence of single CdSe/ZnS core/shell nanocrystals are shown and discussed. Finally, potential applications of nanocrystals as luminescent labels in biological systems are presented and a few challenges for future research are discussed.

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Mn2+ Concentration Effect on the Optical Properties of Zn2SiO4 : Mn Phosphors

Cited by 255 publications

References 4 publications

Combustion Synthesis of the Zn2SiO4:Mn Phosphor

Combustion Synthesis of the Zn2SiO4:Mn Phosphor

NEAR INFRARED – EMITTING Zn2SiO4 POWDERS PRODUCED BY HIGH-ENERGY PLANETARY BALL MILLING TECHNIQUE

Synthesis, simulation & spectroscopy: physical chemistry of nanocrystals

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