“…Generally, the semiconductors that exhibit ferromagnetism at room temperature by doping a small quantity of impurity elements such as transition metal ions or magnetic ions [1][2][3] are considered as dilute magnetic semiconductors. The wide band gap oxide semiconductors such as In2O3, SnO2, TiO2 and ZnO shown ferromagnetism when they are doped by a small quantity of impurities [4,5]. Among the different oxide semiconductors, In2O3 is the promising semiconductor that possess peculiar properties that will be highly useful in many electronic device applications such as magneto resistance, gas sensors, touch screens, liquid crystal displays, transparent conducting electrodes, photo diodes, photo catalysis, ultraviolet lasers, and others [6][7][8][9].…”