2003
DOI: 10.1103/physrevb.68.033302
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p(1×1)toc(4×8)periodicity change in ultrathin iron silicide onet al.

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Cited by 22 publications
(38 citation statements)
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“…Figure 1(a) shows a p(2×2) structure obtained at the annealing temperature of 700 K. With increasing the annealing temperature upto 900 K, the p(2×2) structure transformed to the c(8×4) silicide [ Fig. 1(b)], which is in good agreement with the previous reports [8,30,31]. With further increase of the annealing temperature, the c(8×4) structure gradually changed to the (7×7) structure, which indicates the recovery of the clean Si(111) surface by the diffusion of Fe into deeper bulk.…”
Section: A Iron Silicide Formationsupporting
confidence: 88%
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“…Figure 1(a) shows a p(2×2) structure obtained at the annealing temperature of 700 K. With increasing the annealing temperature upto 900 K, the p(2×2) structure transformed to the c(8×4) silicide [ Fig. 1(b)], which is in good agreement with the previous reports [8,30,31]. With further increase of the annealing temperature, the c(8×4) structure gradually changed to the (7×7) structure, which indicates the recovery of the clean Si(111) surface by the diffusion of Fe into deeper bulk.…”
Section: A Iron Silicide Formationsupporting
confidence: 88%
“…The investigation of the interfacial MDL for ultrathin Fe films on iron silicides and Si(111)-7×7 surfaces plays an important role for the heterojunction. As previously reported [30,31], the high-quality epitaxial ultrathin iron silicides can be obtained on Si(111). These iron silicides are thermally stable, and could be better candidates for the suppression of the interfacial MDL of Fe-Si alloy.…”
Section: Introductionsupporting
confidence: 74%
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“…The magnetic anisotropy has been measured ex situ with the recent Transversely Biased Initial Inverse Susceptibility and Torque (TBIIST) method described in details in the reference [7]. Prior to Fe deposition at room temperature, an ultra thin and atomically flat iron silicide layer with c(4x8) periodicity was grown on the Si(111) wafer [8]. This template layer prevents the diffusion of Si into the Fe layer and improves the epitaxy of the Fe…”
mentioning
confidence: 99%