MMIC family for DBS down-converter with pulse-doped GaAs MESFETs

Shiga, N.; Sekiguchi, Toyokazu; Nakajima, Shigeru; Otobe, K.; Kuwata, N.; Matsuzaki, K.; Hayashi, Hideki

doi:10.1109/4.156445

Cited by 5 publications

(2 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Performance from previous work [2,3,11,12] is summarized and compared with that of our work in Table I. No details about integrated voltage/tone detector are presented in [6,7,8,9,10] and the reason could be that the discrete voltage/tone detector is utilized as in many cases. To the best of the authors' knowledge, this work presents the first low-cost integrated voltage/tone detector for LNB IC, with smallest silicon area, lowest current consumption, and best detection resolution.…”

Section: Measurement Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Integrated CMOS edge voltage quantizer for detection of low-frequency simple waveforms

Pan

Zhou

2015

IEICE Electron. Express

View full text Add to dashboard Cite

A novel edge voltage (EV) quantizer with digital-intensive implementation is proposed to detect DC voltage, peak-to-peak magnitude, and frequency of low-frequency simple waveforms (e.g. sinusoidal). The proposed EV quantizer does not need the area-consuming low pass filter. It can be implemented using digital-intensive circuits with little computing complexity, thanks to the simple detection algorithm. A successive approximation register (SAR) version of the EV quantizer was integrated in a monolithic satellite low noise block (LNB) IC in a 65 nm CMOS process to detect low-frequency control signals. And the measurement results validate that the EV quantizer enables low-cost operation for detection of lowfrequency simple waveforms. Fig. 9. Block diagram of the SAR EV quantizer inside LNB IC.

show abstract

Section: Measurement Resultsmentioning

confidence: 99%

“…Traditional electronics has to develop and update using new technology such as integrated circuits on silicon. In early years, LNB is constructed almost all by discrete components [6,7]. With the rapid development of semiconductor, more and more parts can be integrated in the same die [8,9,10].…”

Section: Introductionmentioning

confidence: 99%