MMIC compatible lightwave-microwave mixing technique

Paolella, A.; Malone, S.; Berceli, T.; Herczfeld, P.R.

doi:10.1109/22.372095

Cited by 18 publications

(2 citation statements)

References 8 publications

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“…Since the 1980s, the photodetection mechanism of high electron mobility transistors (HEMTs) has been studied. [5][6][7][8][9][10] Among various types of phototransistors, pseudomorphic HEMTs (pHEMTs) have many advantages for monolithicmicrowave integrated-circuit (MMIC) optoelectronic integration. Since a large conduction band discontinuity at an AlGaAs/InGaAs heterojunction interface produces high two-dimensional electron gas (2DEG) densities in an InGaAs channel, a pHEMT provides a very high electron mobility without inducing electrons scattering, resulting in a high-frequency performance.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Mixing Phototransistor for Ultrawide-Band Fiber-Radio Systems

Lin¹,

Lai²

2006

jjap

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High quality hetero-epitaxial CeO 2 films are grown on MgO substrates using BaSnO 3 buffer layers. CeO 2 films and BaSnO 3 buffer layers are grown by a pulsed laser deposition method. It is found that the crystallinity of the CeO 2 films directly grown on MgO substrates is quite poor. However when we grow CeO 2 films on MgO substrates with a BaSnO 3 buffer layer, the crystallinity of CeO 2 films is improved from that of the directly grown CeO 2 films. Also the estimated in-plane crystallinity () of the CeO 2 films on the BaSnO 3 buffer layers is much improved by the introduction of the buffer layers. One of the reasons for high quality CeO 2 films are grown on MgO substrates by the introduction of BaSnO 3 buffer layers is the lattice matching between the CeO 2 films and the MgO substrates. The CeO 2 films grow in a 45 rotated mode to the BaSnO 3 buffered MgO substrates, then the lattice mismatch between the sublattice of the CeO 2 films and the MgO substrates is calculated to be 9.3%, while that of the CeO 2 films on MgO substrates in a cube on cube mode is over 25%.

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Section: Introductionmentioning

confidence: 99%

Optoelectronic Mixing Phototransistor for Ultrawide-Band Fiber-Radio Systems

Lin¹,

Lai²

2006

jjap

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“…The imaginary part of the S 22 parameter for the MESFET is significantly changed by varied drain current under the constant drain voltage condition. On the other hand, many authors investigated optically generated currents in a MESFET, and showed that light irradiation caused an increase of the drain current [4,5,6]. The negative resistance circuit in the filter is an injection-locking type MESFET oscillator, therefore, the input reactance of the circuit depends on the S 22 parameter of the MESFET [7].…”

Section: Introductionmentioning

confidence: 99%