MM-wave transceivers using SiGe HBT technology

Gaucher, B.; Beukema, T.; Reynolds, Scott; Floyd, Brian; Zwick, Thomas; Pfeiffer, Ullrich R.; Liu, D.; Cressler, John D.

doi:10.1109/smic.2004.1398172

Cited by 13 publications

(1 citation statement)

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“…SiGe HBTs in BiCMOS technology kits are an appealing solution due to their high cutoff frequency ðf T Þ and superior noise performance. Operation over vast temperature ranges and radiation hardening make them suitable for extreme environments like those seen in space missions [9] as well. IBM's SiGe process is one of particular ability and interest that will be detailed further in the coming discussion in Section II.…”

Section: Introductionmentioning

confidence: 99%

High-Speed Reconfigurable Circuits for Multirate Systems in SiGe HBT Technology

et al. 2015

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| In this paper, we discuss the advantages and opportunities presented by high-speed (> 50 GHz) reconfigurable integrated circuits and how they may drive reconfigurable systems applications, such as software-defined radio, radar, and imaging. We propose silicon-germanium (SiGe) BiCMOS as an example technology that enables ultrafast reconfigurable systems and present several circuit designs based on SiGe heterojunction bipolar transistors (HBTs). We compare circuit designs between generations of IBM's SiGe process, including a recent 9HP process featuring devices with a cutoff frequency ðf T Þ of 300 GHz. We describe an architecture for an 8-b 80-Gs/s analog-to-digital converter (ADC) and a 48 Â 48 cell fieldprogrammable gate array (FPGA), which provide powerful solutions for useful functions, such as digital signal processing (DSP) and polyphase filtering. Other circuit concepts are described, including a voltage-controlled oscillator (VCO) with a tuning range of 26 GHz and a high-performance (80 Gb/s) crossbar switch, which provide utility in reconfigurable system applications. Measured results from fabricated implementations of these described systems are presented. We comment on future prospects of these systems and examine an emerging lateral bipolar device (f T ¼ 825 GHz) having 100Â less power consumption than conventional vertical HBTs.

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Section: Introductionmentioning

confidence: 99%