High-Speed Reconfigurable Circuits for Multirate Systems in SiGe HBT Technology

Abstract

| In this paper, we discuss the advantages and opportunities presented by high-speed (> 50 GHz) reconfigurable integrated circuits and how they may drive reconfigurable systems applications, such as software-defined radio, radar, and imaging. We propose silicon-germanium (SiGe) BiCMOS as an example technology that enables ultrafast reconfigurable systems and present several circuit designs based on SiGe heterojunction bipolar transistors (HBTs). We compare circuit designs between generations of IBM's SiGe process, including a recent 9HP process featuring devices with a cutoff frequency ðf T Þ of 300 GHz. We describe an architecture for an 8-b 80-Gs/s analog-to-digital converter (ADC) and a 48 Â 48 cell fieldprogrammable gate array (FPGA), which provide powerful solutions for useful functions, such as digital signal processing (DSP) and polyphase filtering. Other circuit concepts are described, including a voltage-controlled oscillator (VCO) with a tuning range of 26 GHz and a high-performance (80 Gb/s) crossbar switch, which provide utility in reconfigurable system applications. Measured results from fabricated implementations of these described systems are presented. We comment on future prospects of these systems and examine an emerging lateral bipolar device (f T ¼ 825 GHz) having 100Â less power consumption than conventional vertical HBTs.

Reconfigurable arithmetic logic unit designed with threshold logic gates

“…Finally, there are other design approaches to provide reconfigurable circuits such as carbon nanotubes [24], silicon nanowires at layout level [25], silicon‐germanium heterojunction bipolar transistor technology [26], photonics at silicon level and electrons [27]. They are specifically focused on the level of electronic mobility, charge densities, body effects, and mobility in the transistor conduction channel.…”

A 5GS/s 8-bit ADC with Self-Calibration in 0.18 μm SiGe BiCMOS Technology

“…In addition, due to its reliability in extreme environmental conditions and inherent tolerance to irradiation effects, it is suitable for special applications such as space exploration [8][9][10]. With the rapid development of semiconductor integrated circuits, BiCMOS technology can offer the synthesis of low power excellence of CMOS and low distortion capability of HBT [11,12], facilitating the design of high-performance ADCs. Besides, the 0.18 µm SiGe BiCMOS technology is cost efficient and beneficial for special applications in low-volume manufacturing.…”