Mixed disorder in GaAs/Al Ga1−As superlattices and its effect on the range of wavelength infrared lasers

Djelti, R.; Bentata, S.; Aziz, Z.; Anissa, Besbes

doi:10.1016/j.ijleo.2012.11.055

Cited by 5 publications

(1 citation statement)

References 22 publications

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“…However, that one seed is repeated in dimer and trimer fashion multiplies (fragments) the transmission minibands and minigaps in a specific energy region at the same pace. Random dimer and trimer semiconductor superlattices have also been investigated experimentally [27][28][29][30][31] and theoretically [32][33][34][35][36][37][38][39]. For instance, the correlated disorder in random trimer InAs/InGaAs superlattices causes the delocalization of electron states owing to trimer tunneling states [40].…”

Section: Introductionmentioning

confidence: 99%

Spin-valley polarization and tunneling magnetoresistance in monomer, dimer, and trimer magnetic silicene superlattices

Rojas-Briseño,

Villasana-Mercado,

Molina-Valdovinos

et al. 2024

J. Phys.: Condens. Matter

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Monomer, dimer and trimer semiconductor superlattices are an alternative for bandgap engineering due to the possibility of duplicate, triplicate and in general multiply the number of minibands and minigaps in a speciﬁc energy region. Here, we show that monomer, dimer and trimer magnetic silicene superlattices (MSSLs) can be the basis for tunable magnetoresistive devices due to the multiplication of the peaks of the tunneling magnetoresistance (TMR). In addition, these structures can serve as spin-valleytronic devices due to the formation of two well-deﬁned spin-valley polarization states by adjusting appropriately the superlattice structural parameters. We obtain these conclusions by studying the spin-valley polarization and TMR of monomer, dimer and trimer MSSLs. The magnetic unit cell is structured

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Section: Introductionmentioning

confidence: 99%

Spin-valley polarization and tunneling magnetoresistance in monomer, dimer, and trimer magnetic silicene superlattices

Rojas-Briseño,

Villasana-Mercado,

Molina-Valdovinos

et al. 2024

J. Phys.: Condens. Matter

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Theoretical study of electronic properties of resonant tunneling diodes based on double and triple AlGaAs barriers

Almansour

2020

Results in Physics

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Ballistic transport in one-dimensional random dimer photonic crystals

Cherid

Bentata

Zitouni

et al. 2014

Solid State Communications

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The low-field magnetic response of the non-centrosymmetric superconductor YPtBi (T c = 0.77 K) is investigated. Ac-susceptibility and dc-magnetization measurements provide solid evidence for bulk superconductivity with a volume fraction of ∼ 70 %. The lower critical field is surprisingly small: B c1 = 0.008 mT (T → 0). Muon spin rotation experiments in a transverse magnetic field of 0.01 T show a weak increase of the Gaussian damping rate σ T F below T c , which yields a London penetration depth λ = 1.6 ± 0.2 µm. The zero-field Kubo-Toyabe relaxation rate σ KT equals 0.129 ± 0.004 µs −1 and does not show a significant change below T c . This puts an upper bound of 0.04 mT on the spontaneous magnetic field associated with a possible odd-parity component in the superconducting order parameter.

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Mixed disorder in GaAs/Al Ga1−As superlattices and its effect on the range of wavelength infrared lasers

Cited by 5 publications

References 22 publications

Spin-valley polarization and tunneling magnetoresistance in monomer, dimer, and trimer magnetic silicene superlattices

Spin-valley polarization and tunneling magnetoresistance in monomer, dimer, and trimer magnetic silicene superlattices

Theoretical study of electronic properties of resonant tunneling diodes based on double and triple AlGaAs barriers

Ballistic transport in one-dimensional random dimer photonic crystals

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