The platform will undergo maintenance on Sep 14 at about 7:45 AM EST and will be unavailable for approximately 2 hours.
2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO) 2020
DOI: 10.23919/mipro48935.2020.9245441
|View full text |Cite
|
Sign up to set email alerts
|

Mismatch Reduction Techniques for Current-Mirror Based Potentiostats

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 12 publications
0
3
0
Order By: Relevance
“…The basic problem of fabricating circuits in nanometer technologies is the mismatch of process parameters leading to a change in the thickness of the gate oxide in field-effect transistors [ 38 ]. As for SNNs, the change in threshold voltages of MOS transistors caused by this phenomenon leads to a change in scaling factors of the current mirror multipliers, and thus in the weights of connections in the network [ 39 ]. The mismatch problem is the basic source of damages to integrated circuits at the fabrication stage and requires proposing effective testing methods [ 40 ].…”
Section: Pattern Classificationmentioning
confidence: 99%
“…The basic problem of fabricating circuits in nanometer technologies is the mismatch of process parameters leading to a change in the thickness of the gate oxide in field-effect transistors [ 38 ]. As for SNNs, the change in threshold voltages of MOS transistors caused by this phenomenon leads to a change in scaling factors of the current mirror multipliers, and thus in the weights of connections in the network [ 39 ]. The mismatch problem is the basic source of damages to integrated circuits at the fabrication stage and requires proposing effective testing methods [ 40 ].…”
Section: Pattern Classificationmentioning
confidence: 99%
“…It is the simplest and most effective method to obtain real-time motor winding current and achieve lossless current detection. Compared with other methods, sense FET current sensing can simplify the circuit design, but due to the large difference in aspect ratio between the power transistor and sensing transistor, there will be a current mismatch [14,15]. The amount of mismatch is directly reflected in the error between the detected current and actual current, which has a great impact on the accuracy.…”
Section: Introductionmentioning
confidence: 99%
“…The accuracy and sensitivity of the current mirror are essential in characterizing and processing the biosensor current signal. It is highly influenced by the matching characteristics of the transistors used in the current mirror [4,5]. A current mirror with mismatched transistors (e.g.…”
Section: Introductionmentioning
confidence: 99%