Miscibility gap calculation for Ga1−xInxNyAs1−y including strain effects

Schlenker, D.; Miyamoto, Taichi; Pan, Zhongqi; Koyama, Fumio; Iga, Kenichi

doi:10.1016/s0022-0248(98)00787-8

Cited by 39 publications

(22 citation statements)

References 14 publications

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“…Dilute nitrides are made of binary constituents, the sub-lattices of which possess different crystal structures, and they have an alloy miscibility gap [11]. Therefore, a non-equilibrium growth method, such as molecular beam epitaxy (MBE), is desired for preparing these alloys.…”

Section: Introductionmentioning

confidence: 99%

Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Pavelescu¹,

Hakkarainen²,

Dhaka³

et al. 2005

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Pavelescu¹,

Hakkarainen²,

Dhaka³

et al. 2005

Journal of Crystal Growth

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“…The Ga-N-As materials system is extremely interesting for several reasons. N-doped GaAs is being increasingly studied due to the large negative bowing in the band gap [1][2][3][4][5]. This allows one to achieve a significant shift in the band gap for comparatively small amounts of nitrogen in the alloy, with potential applications for long wavelength opto-electronic devices.…”

mentioning

confidence: 99%

“…This allows one to achieve a significant shift in the band gap for comparatively small amounts of nitrogen in the alloy, with potential applications for long wavelength opto-electronic devices. However, the large difference in lattice parameters between GaN and GaAs and the large miscibility gap makes it difficult to grow films of high quality [1][2][3][4][5].Much less attention has been focussed on As-doped GaN due to the lower solubility of As in . One interesting observation, with potential device applications, is the report of blue luminescence at low temperature in As-doped GaN prepared by ion implantation and in films grown by metalorganic vapour phase epitaxy [6,7].…”

mentioning

confidence: 99%

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On the Origin of Blue Emission from As-Doped GaN

Harrison

Новиков

et al. 2001

phys. stat. sol. (b)

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As-doped GaN films have been grown by plasma-assisted molecular beam epitaxy and their properties investigated using atomic force microscopy, X-ray diffraction and photoluminescence (PL) spectroscopy. The structural properties of the As-doped GaN films improve with increasing sample thickness. The room temperature PL is dominated by a strong blue emission band, exhibiting multiple peaks centered at 2.6 eV. The number of peaks increases monotonically with sample thickness. From this we conclude that the multiple peaks in the blue emission band of As-doped GaN samples arise mainly from optical interference effects. However, the possibility of several transitions involving As being responsible for the blue emission process cannot be excluded.Group III-nitride semiconductors are now widely studied in the literature owing to their potential applications for light emitting devices in the visible part of the spectrum and for high-power, high-frequency, high-temperature electronic device applications. The present range of devices use the AlGaInN material system, but more recently alloys with mixed group V elements have been increasingly studied for a variety of applications. The Ga-N-As materials system is extremely interesting for several reasons. N-doped GaAs is being increasingly studied due to the large negative bowing in the band gap [1][2][3][4][5]. This allows one to achieve a significant shift in the band gap for comparatively small amounts of nitrogen in the alloy, with potential applications for long wavelength opto-electronic devices. However, the large difference in lattice parameters between GaN and GaAs and the large miscibility gap makes it difficult to grow films of high quality [1][2][3][4][5].Much less attention has been focussed on As-doped GaN due to the lower solubility of As in . One interesting observation, with potential device applications, is the report of blue luminescence at low temperature in As-doped GaN prepared by ion implantation and in films grown by metalorganic vapour phase epitaxy [6,7]. Recently we reported strong blue luminescence at room temperature in As-doped GaN samples grown by Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) [8-10]. As-doped GaN films might, therefore, be a suitable replacement for InGaN layers in opto-electronic devices based on growth by MBE.In the room temperature photoluminescence (PL) spectrum from our As-doped GaN samples grown by PA-MBE [8-10] several peaks are observed in the near band edge region at about 3.2 and 3.4 eV together with strong blue emission at about 2.6 eV. With increasing As flux during growth, the intensity of the band edge features decrease and the blue emission intensity increases [8]. With increasing nitrogen to gallium ratio, however, the intensities of both band edge emission and blue emission increase in direct

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“…In fact, Schlenkler et al [12] found theoretically that that strain reduces the critical temperature above which GaAs 1-x N x is stable. In this paper, we analyze coherently grown GaAs 1-x N x on a Ge substrate (a common substrate for the four-junction solar cell), hereafter ''GaAsN/Ge'', to determine how strain affects the composition of GaAsN at low N composition.…”

Section: Introductionmentioning

confidence: 99%