Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge

Kawano, Jun; Kangawa, Yoshihiro; T, Ito; Kakimoto, Koichi; Koukitu, Akinori

doi:10.1016/j.jcrysgro.2011.12.079

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“…In this study, coherent growth of GaAsN on a Ge substrate was assumed, and the influence of lattice constraint from the substrate was treated as in Kawano et al;11) that is, the effective enthalpy of mixing was obtained by the following equation described in Yayama et al: 16)…”

Section: Calculation Methodsmentioning

confidence: 99%

Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources

Kawano

Kangawa

Yayama

et al. 2013

Jpn. J. Appl. Phys.

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Thermodynamic analysis of coherently grown GaAs1-x N x on Ge with low N content was performed to determine the relationship between solid composition and growth conditions. In this study, a new algorithm for the simulation code, which is applicable to wider combinations of gaseous sources than the traditional algorithm, was developed to determine the influence of different gaseous sources on N incorporation. Using this code, here we successfully compared two cases: one is a system using trimethylgallium (TMG), AsH3, and NH3, and the other uses dimethylhydrazine (DMHy) instead of NH3. It was found that the optimal N/As ratio of input gas in the system using DMHy was much lower than that using NH3. This shows that the newly developed algorithm could be a useful tool for analyzing the N incorporation during the vapor growth of GaAs1-x N x .

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Section: Calculation Methodsmentioning

confidence: 99%