MIS silicon solar cells

Fabre, E.

doi:10.1063/1.89160

Cited by 28 publications

(9 citation statements)

References 6 publications

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“…The decrease is partly due to the lower opencircuit voltage and partly due to the increasing "roundness" in the knee of the I-V curve as the temperature increases. The saturation and further decrease of FF for temperatures below 250 K might be caused by the increase of Rs and n. There is some evidence [1] that n and Rs decrease with increasing temperature. The observed decrease (Fig.…”

Section: Vo~ -Nkt Ln (Is~/a) + Nc~* Nkt Ln (A*t 2)mentioning

confidence: 93%

“…MIS solar cells have been studied by many workers [1][2][3][4] as a low-cost alternative to the p -n junction solar cells. MIS solar cell is an improved version of a Schottky barrier solar cell having an ultrathin insulating layer in between the metal and semiconductor which increases the open-circuit voltage.…”

mentioning

confidence: 99%

“…Knowing the value of n from the above equation, the barrier height (~b~') can be obtained from the equation [1] …”

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confidence: 99%

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Temperature effects in Mis solar cells on single crystal p-silicon

et al. 1987

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In recent years the potential use of MIS silicon devices in photovoltaic conversion has been widely demonstrated. MIS solar cells have been studied by many workers [1][2][3][4] as a low-cost alternative to the p -n junction solar cells. MIS solar cell is an improved version of a Schottky barrier solar cell having an ultrathin insulating layer in between the metal and semiconductor which increases the open-circuit voltage. Several recent papers [5][6][7] have described the experimental energy conversion properties of the MIS solar cell, while others [8][9][10] have discussed the theory of this device. However, these papers give very little information about the current conduction mechanism, the role of surface states, nature of the oxide layer and insight about the shunt resistance of the cell. In order to obtain the above information it is necessary to investigate the current-voltage characteristics of an illuminated MIS solar cell over a wide temperature range. However, a few workers [11][12][13][14] have studied the effect of temperature of the performance of MIS solar cells but in most of the work reported, dark I -V curves have been studied to decide whether the device is a minority or majority carrier device. No attempt was made to observe illuminated I -V curves and other diode parameters as a function of temperature.The present letter reports illuminated currentvoltage characteristics of A1-SiO-Si (p-type) solar cells over a wide range of temperature: 100 to 450K. The parameters, like the diode quality factor and series resistance, were also measured in this temperature range. The observed results for the variation of open-circuit voltage (Vow), short circuit current (Isc), fillfactor (FF), efficiency (r/), series resistance (Rs) and diode quality factor (n) with temperature have been discussed and compared with available results.The cells reported here have the structure SiOxAR coating/Ti P d -A g grid/SiO2/Si substrate/A1 back contact. The p-type [1 0 0] 1.0 fl cm silicon wafers were polished on one side and lapped on the other side to form ohmic contact. On the rear side of the wafer an aluminium layer was evaporated and sintered at about 750°C for 5min in argon atmosphere containing traces of oxygen. An oxide layer ~ 3 nm thick was deposited as defined by photolithographic methods and finally the SiOxAR coating (~8 0 n m ) was deposited. The performance parameters for one of the best cells of the batch were measured at room temperature and under A M I ( 1 0 0 m W c m 2) illumination. The following values were found: Voc = 470 mV, I~c = 29.1 mA, FF = 0.66 and active area efficiency (r/a) = 7.0%.The value of diode quality factor (n) was determined from the slope ofln (Isc) against Voc plots at low intensities such that the relation Vo~ -nkT ln (Is~/A) + nc~* nkT ln (A*T 2)q q (2) at a particular temperature. The value of ~b* for our cell was found to be 0.835 eV at room temperature.In order to measure the temperature variation of various parameters, the solar cell was mounted in a specially designed sam...

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Section: Vo~ -Nkt Ln (Is~/a) + Nc~* Nkt Ln (A*t 2)mentioning

confidence: 93%

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confidence: 99%

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Temperature effects in Mis solar cells on single crystal p-silicon

et al. 1987

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“…Clearly the functional dependence of the open-circuit voltage on insulator thickness and ideality factor described by (6) is completely different from the one in (5). This seems puzzling since both these equations are derived on the basis of the same assumption that the surface potential of the semiconductor can be represented by (4). Because of this reason, the uniqueness of the expression for U,, of MIS solar cells is lost.…”

Section: Introductionmentioning

confidence: 99%

“…Note that the ideality factor of the device (2) is a function of voltage through (3) and (4). One can readily derive an alternative expression for U,, using (2) to (4) given by…”

Section: Introductionmentioning

confidence: 99%

Functional dependence of open-circuit voltage on interface parameters and doping concentration of MIS solar cells

Chattopadhyay

1993

Phys. Stat. Sol. (a)

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The dependence of open‐circuit voltage of MIS solar cells on interface parameters and doping concentration is reexamined. It is shown that the familiar expression for the open‐circuit voltage lacks uniqueness because of the improper choice of semiconductor surface potential. A relation for the open‐circuit voltage is proposed, the functional form of which is different from the existing one. The expression for the open‐circuit voltage for ideal metal‐semiconductor (MS) solar cells follows as a special case from the proposed relation.

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