Functional dependence of open-circuit voltage on interface parameters and doping concentration of MIS solar cells

Chattopadhyay, Pabitra

doi:10.1002/pssa.2211400230

Cited by 7 publications

(3 citation statements)

References 10 publications

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“…For a weakly inverted, majority-carrier dominated junction, though, higher doping level should imply lower V OC , as was demonstrated analytically by Chattopadhyay. 48 In Fig. 3 we show the photovoltaic current for the n-Si/HQ-MeOH/Hg junctions, described above, illuminated with 561 nm laser light.…”

Section: Pv Measurementmentioning

confidence: 99%

Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

et al. 2012

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We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface. Such behavior is highly unusual for a covalent, narrow bandgap semiconductor, such as Si. Short, ambient atmosphere, room temperature treatment of oxide-free Si(100) in hydroquinone (HQ)/alkyl alcohol solutions, fully passivates the Si surface, while allowing controlled change of the resulting surface potential. The junctions formed, upon contacting such surfaces with Hg, a metal that does not chemically interact with Si, follow the Schottky-Mott model for metal-semiconductor junctions closer than ever for Si-based junctions. Two examples of such ideal behavior are demonstrated: a) Tuning the molecular surface dipole over 400 mV, with only negligible band bending, by changing the alkyl chain length. Because of the excellent passivation this yields junctions with Hg with barrier heights that follow the change in the Si effective electron affinity nearly ideally. b) HQ/ methanol passivation of Si is accompanied by a large surface dipole, which suffices, as interface dipole, to drive the Si into strong inversion as shown experimentally via its photovoltaic effect. With only ∼0.3 nm molecular interlayer between the metal and the Si, our results proves that it is passivation and prevention of metal-semiconductor interactions that allow ideal metal-semiconductor junction behavior, rather than an insulating transport barrier.

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Section: Pv Measurementmentioning

confidence: 99%

Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

et al. 2012

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“…This evolution of E may be confirmed the increase of the series resistance and the quality factor. The ideality factor has been discussed as a function of the densities of recombination states [11] and shown to be dependent on the …”

Section: Resultsmentioning

confidence: 99%

Diode Physical Parameters for HEXFETs Characterization of Dose Effect

Bendada¹,

Rais

1998

Active and Passive Electronic Components

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Modeling techniques of P-N junctions have been applied for studying the physical parameters in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a precise description of the changes in conduction processes due to radiation damages in the integral body-drain junction. A large increase of the ideality factor and series resistance is related to radiation-induced defects.

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“…Changes in V OC can be ascribed to changes in the CNT work function. As the present PV devices are usually described in a MIS scheme 9 44 , V OC ( Equation 2 ) can be expressed 61 62 as:…”

Section: Discussionmentioning

confidence: 99%

A cross-functional nanostructured platform based on carbon nanotube-Si hybrid junctions: where photon harvesting meets gas sensing

Rigoni

Pintossi

Drera

et al. 2017

Sci Rep

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A combination of the functionalities of carbon nanotube (CNT)-Si hybrid heterojunctions is presented as a novel method to steer the efficiency of the photovoltaic (PV) cell based on these junctions, and to increase the selectivity and sensitivity of the chemiresistor gas sensor operated with the p-doped CNT layer. The electrical characteristics of the junctions have been tracked by exposing the devices to oxidizing (NO2) and reducing (NH3) molecules. It is shown that when used as PV cells, the cell efficiency can be reversibly steered by gas adsorption, providing a tool to selectively dope the p-type layer through molecular adsorption. Tracking of the current-voltage curve upon gas exposure also allowed to use these cells as gas sensors with an enhanced sensitivity as compared to that provided by a readout of the electrical signal from the CNT layer alone. In turn, the chemiresistive response was improved, both in terms of selectivity and sensitivity, by operating the system under illumination, as the photo-induced charges at the junction increase the p-doping of CNTs making them more sensitive to NH3 and less to NO2.

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Functional dependence of open-circuit voltage on interface parameters and doping concentration of MIS solar cells

Cited by 7 publications

References 10 publications

Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

Diode Physical Parameters for HEXFETs Characterization of Dose Effect

A cross-functional nanostructured platform based on carbon nanotube-Si hybrid junctions: where photon harvesting meets gas sensing

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