Minority carriers in zinc sulphide

Abstract

Photovoltage and photoconductivity measurements were made in non-intentionally doped and diffiision-doped XnS rrynt.nla grown frnm melt. tinder high prenniire. The photovoltage measurements allow the excitation of minority carriers to be detected. Whereas in the non-intentionally doped samples minority carriers are generated only by irradiation in the fundamental lattice absorption range, in Cu-doped crystals an excitation of holes is observed down to 2.5 eV. The hole lifeti111~8 a t fundamental lattice excitation have values of 10-10to 10-12 s in Cu-doped samples, in the undoped sampler they are greater than 10-lo 8. The photovoltage spectra are similar to the excitation spectra of photoluminescence.