Minority Carrier Recombination in Neutron Irradiated Silicon

Gregory, Bob

doi:10.1109/tns.1969.4325505

Cited by 76 publications

(23 citation statements)

References 16 publications

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“…Curtis described a defect-cluster model that predicted such behavior [34]. Recombination data and cluster modeling by Gregory [26] are also consistent with such effects. [26] and Othmer [29] are used to establish the high-NIEL values for K .…”

Section: Solar-cell and Bulkmentioning

confidence: 63%

“…Fig. 7 shows examples of the injection-level dependence of [20], [26]. Injection effects are quite different when behavior for particles that produce only isolated defects is compared with that for particles that produce subclusters.…”

Section: Recombination At Radiation-induced Centersmentioning

confidence: 99%

“…2) For relatively high NIEL, all data group together reasonably well. Reasons for the scatter in that regime include: a) is somewhat different for n-and p-type Si when data obtained by the same researcher at the same NIEL value are compared (e.g., Curtis [25] or Gregory [26]); b) differences between 7. Comparison of the injection-level dependence of recombination damage factor for neutron-and Co gamma-irradiated silicon.…”

Section: Recombination At Radiation-induced Centersmentioning

confidence: 99%

“…10 presents a representative overview of the present description of recombination processes for the case of relatively low resistivities and low injection levels. For this example, constant damage factors at high NIEL for n-and p-type Si are based on data obtained by Gregory [26] and Othmer [29] for neutron-irradiated devices. (Damage-factor differences between n-and p-type Si at high NIEL have been measured by several workers [25], [26], [30], [32], [33], and that topic is considered further in Section IV-C.) Constant damage factors at low NIEL emphasize Yamaguchi's data [18], [23] for Co and 1-MeV electron-irradiated solar cells made from FZ and CZ material.…”

Section: Solar-cell and Bulkmentioning

confidence: 99%

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A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices

Srour

Palko

2006

IEEE Trans. Nucl. Sci.

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A framework is presented for understanding carrier generation and recombination mechanisms in irradiated silicon devices. Data obtained by many workers for irradiated bulk material and devices are analyzed and summarized, and key damagefactor dependences are identified. Measurements, simulations, and analyses support the conclusion that correlation of displacement damage effects with the rate of nonionizing energy loss (NIEL) for proton, neutron, pion, and heavy-ion bombardment is due to the dominant influence of defect subclusters. At low NIEL values ( 5 10 5 MeV-cm 2 /g), isolated defects dominate the electrical properties. At relatively high NIEL ( 2 10 4 MeV-cm 2 /g), subclusters dominate. Enhanced carrier generation and recombination produced by those small disordered regions is considered. Modeling results are presented for behavior observed in the transition region between domination by isolated defects and by clusters. The model presented in this paper simultaneously accommodates defect cluster models and NIEL scaling phenomena in the same framework.

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Section: Solar-cell and Bulkmentioning

confidence: 63%

Section: Recombination At Radiation-induced Centersmentioning

confidence: 99%

Section: Recombination At Radiation-induced Centersmentioning

confidence: 99%

Section: Solar-cell and Bulkmentioning

confidence: 99%

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A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices

Srour

Palko

2006

IEEE Trans. Nucl. Sci.

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“…12 and 13 show the calculated effect of the fast neutron irradiation on the spectral response, short circuit current, maximum output power, and open circuit voltage. The degradation is more distinct than in the case of gamma-irradiation, for the cluster [22,23] introduced in this case has a greater damage constant than the E-centre and J'-centre introduced by the gamma-irradiation. The adopted damage constant of Table II has been reported by Stein [12] on N-type F-Z single crystal.…”

Section: Imentioning

confidence: 93%

Predicted effects of gamma and neutron irradiation on silicon solar cells

Usami

1973

Opto-electronics

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Numerical analysis of the characteristics of silicon solar cells under y-ray or fast neutron irradiation is presented. The degradation of spectral response, short-circuit current, maximum power, open-circuit voltage and curve power factor are discussed. The calculation is based on estimating the minority carrier lifetime by the ShockleyRead equation, assuming the introduction rate, capture cross-section and the energy level to be equal to those of various predominant recombination centres, such as E-centre (phosphorus-vacancy complex), A-centre (oxygen-vacancy complex) and J'-centre (boron-vacancy complex) in y-irradiated silicon single crystals. The simulated results show good agreement with experiment for N-type F.Z and C.Z bulk crystals with E-centres, and for P-type C'Z bulk crystal with J'-centres.

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Investigation of Radiation Damage in Silicon Produced by Fast Neutron Irradiation with Lifetime Measurements and Deep Level Transient Spectroscopy

Stefanov

Hardalov

Sueva

1997

phys. stat. sol. (a)

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Deep level transient spectroscopy (DLTS) and lifetime measurements were carried out on silicon p+nn+ diodes before and after irradiation with fast neutrons at room temperature with fluences of 5.5 × 1011 and 1.0 × 1012 n/cm2. In the non‐irradiated samples the observed levels satisfactorily explained the measured data of recombination and generation lifetimes in the frame of the Shockley‐Hall‐Read (SHR) theory. After irradiation the lifetime data showed discrepancies with the parameters of the existing levels, which was explained by the cluster structure of the neutron damage defects.

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Minority Carrier Recombination in Neutron Irradiated Silicon

Cited by 76 publications

References 16 publications

A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices

A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices

Predicted effects of gamma and neutron irradiation on silicon solar cells

Investigation of Radiation Damage in Silicon Produced by Fast Neutron Irradiation with Lifetime Measurements and Deep Level Transient Spectroscopy

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