Minority carrier recombination in heavily-doped silicon

Tyagi, Mohit; Overstraeten, R. Van

doi:10.1016/0038-1101(83)90174-0

Cited by 263 publications

(102 citation statements)

References 61 publications

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“…Here we also compare surface recombination velocities, S, obtained on methyl and octylate terminated n-type silicon surface. [26] Values of S = 0.7 cm s -1 have been extracted in RN of propenyl and propynyl -SiNWs, i.e. around four and one half lower than that of RN-SiO2 (2.7 cm s -1 ) and methyl (1.3 cm s -1 ) -SiNWs, respectively.…”

Section: Resultsmentioning

confidence: 85%

“…The observed reduction of surface recombination velocity agrees with analogous effects seen on chlorinated/alkylated nSi surfaces. [26] In propenyl -SiNWs films a fast decay component (3.7 cm s -1 ) has been also observed. The reduction of the S values with respect to SiO2 RN-SiNWs indicates that molecule terminations partially passivate interface trap states, explaining this way the achievement of stability to oxidation.…”

Section: Resultsmentioning

confidence: 87%

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Electrical Transport Features of SiNWs Random Network on Si Support after Covalent Attachment of New Organic Functionalities

Ambrico

Mundo

2012

Nanomaterials and Nanotechnology

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Modification of the electrical transport of a random network of silicon nanowires assembled on nsilicon support, after silicon nanowires functionalization by chlorination/alkylation procedure , is here described and discussed. We show that the organic functionalities induce charge transfer at single SiNW and produce doping-like effect that is kept in the random network too. The SiNWs network also presents a surface recombination velocity lower than that of bulk silicon. Interestingly, the functionalized silicon nanowires/n-Si junctions display photo-yield and open circuit voltages higher than those including oxidized silicon nanowire networks. Electrical properties stability in time of junctions embedding propenyl terminated silicon nanowires network and transport modification after secondary functionalization is also shown. These results suggest a possible route for the integration of functionalized Si nanowires, although randomly distributed, in stable large area photovoltaic or molecule sensitive based devices.

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Section: Resultsmentioning

confidence: 85%

Section: Resultsmentioning

confidence: 87%

Electrical Transport Features of SiNWs Random Network on Si Support after Covalent Attachment of New Organic Functionalities

Ambrico

Mundo

2012

Nanomaterials and Nanotechnology

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“…Diffusion enlarges the size of the charge cloud and could cause spreading of charges across several adjacent elements. It is reasonable to assume that the recombination losses are negligible in this region due to large carrier lifetime (∼10 −3 s; Tyagi & van Overstraeten 1983). The general expression for the mean-square radius of charge cloud reaching the interface between the field and field-free zone is given by (Pavlov & Nousek 1999) …”

Section: Field-free Zone Interactionsmentioning

confidence: 99%

Simulating charge transport to understand the spectral response of Swept Charge Devices

Athiray

Sreekumar

Narendranath

et al. 2015

A&A

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Context. Swept Charge Devices (SCD) are novel X-ray detectors optimized for improved spectral performance without any demand for active cooling. The Chandrayaan-1 X-ray Spectrometer (C1XS) experiment onboard the Chandrayaan-1 spacecraft used an array of SCDs to map the global surface elemental abundances on the Moon using the X-ray fluorescence (XRF) technique. The successful demonstration of SCDs in C1XS spurred an enhanced version of the spectrometer on Chandrayaan-2 using the next-generation SCD sensors. Aims. The objective of this paper is to demonstrate validation of a physical model developed to simulate X-ray photon interaction and charge transportation in a SCD. The model helps to understand and identify the origin of individual components that collectively contribute to the energy-dependent spectral response of the SCD. Furthermore, the model provides completeness to various calibration tasks, such as generating spectral matrices (RMFs -redistribution matrix files), estimating efficiency, optimizing event selection logic, and maximizing event recovery to improve photon-collection efficiency in SCDs. Methods. Charge generation and transportation in the SCD at different layers related to channel stops, field zones, and field-free zones due to photon interaction were computed using standard drift and diffusion equations. Charge collected in the buried channel due to photon interaction in different volumes of the detector was computed by assuming a Gaussian radial profile of the charge cloud. The collected charge was processed further to simulate both diagonal clocking read-out, which is a novel design exclusive for SCDs, and event selection logic to construct the energy spectrum. Results. We compare simulation results of the SCD CCD54 with measurements obtained during the ground calibration of C1XS and clearly demonstrate that our model reproduces all the major spectral features seen in calibration data. We also describe our understanding of interactions at different layers of SCD that contribute to the observed spectrum. Using simulation results, we identify the origin of different spectral features and quantify their contributions.

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“…The following models were used in the simulations: Schottky contact [19], electron effective density [20], hole effective density [21], carrier lifetimes [22], [23], enhanced Lombardi model for surface scattering and temperature dependent mobility [24] and Philips unified mobility model [25] for carrier concentration dependent mobilities.…”

Section: Simulationmentioning

confidence: 99%

On the modelling and optimisation of a novel Schottky based silicon rectifier

Hemert

Hueting

Rajasekharan

et al. 2010

2010 Proceedings of the European Solid State Device Research Conference

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Abstract-The charge plasma (CP) diode is a novel silicon rectifier using Schottky barriers, to circumvent the requirement for doping and related problems when small device dimensions are used. We present a model for the DC current voltage characteristics and verify this using device simulations. The model revealed an exponential dependence of the current on the metal work functions. And approximate linear dependence on the device geometry. The model is used to optimise the device performance. We show a factor 30 improvement in on/off current ratio (and hence rectification) toward 10E7 by appropriate sizing of the lateral device dimensions at given specific metal work functions.

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Minority carrier recombination in heavily-doped silicon

Cited by 263 publications

References 61 publications

Electrical Transport Features of SiNWs Random Network on Si Support after Covalent Attachment of New Organic Functionalities

Electrical Transport Features of SiNWs Random Network on Si Support after Covalent Attachment of New Organic Functionalities

Simulating charge transport to understand the spectral response of Swept Charge Devices

On the modelling and optimisation of a novel Schottky based silicon rectifier

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