Minority carrier diffusion lengths in liquid phase epitaxial InGaAsP and InGaAs

Tashima, M. M.; Cook, L. W.; Stillman, G. E.

doi:10.1007/bf02672398

Cited by 14 publications

(4 citation statements)

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“…7 b, the mobility-lifetime product is extracted to be 6.6 × 10 –7 cm 2 ·V −1 and the corresponding electron diffusion length is 1.3 μm. The obtained electron diffusion length is about 35% lower than that measured and estimated in experimental results of InGaAs p-n junctions 28 . The thicker structure (8 μm) in that InGaAs p-n junctions compared with ours (200 nm) may contribute to the difference of mobility-lifetime product between these two experimental results.…”

Section: Resultscontrasting

confidence: 57%

Minority carrier decay length extraction from scanning photocurrent profiles in two-dimensional carrier transport structures

Wei

Chu

Mao

2021

Sci Rep

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Carrier transport was studied both numerically and experimentally using scanning photocurrent microscopy (SPCM) in two-dimensional (2D) transport structures, where the structure size in the third dimension is much smaller than the diffusion length and electrodes cover the whole terminal on both sides. Originally, one would expect that with increasing width in 2D transport structures, scanning photocurrent profiles will gradually deviate from those of the ideal one-dimensional (1D) transport structure. However, the scanning photocurrent simulation results surprisingly showed almost identical profiles from structures with different widths. In order to clarify this phenomenon, we observed the spatial distribution of carriers. The simulation results indicate that the integrated carrier distribution in the 2D transport structures with finite width can be well described by a simple-exponential-decay function with the carrier decay length as the fitting parameter, just like in the 1D transport structures. For ohmic-contact 2D transport structures, the feasibility of the fitting formula from our previous 1D analytical model was confirmed. On the other hand, the application of a simple-exponential-decay function in scanning photocurrent profiles for the diffusion length extraction in Schottky-contact 2D transport structures was also justified. Furthermore, our simulation results demonstrate that the scanning photocurrent profiles in the ohmic- or Schottky-contact three-dimensional (3D) transport structures with electrodes covering the whole terminal on both sides will reduce to those described by the corresponding 1D fitting formulae. Finally, experimental SPCM on a p-type InGaAs air-bridge two-terminal thin-film device was carried out. The measured photocurrent profiles can be well fitted by the specific fitting formula derived from our previous 1D analytical model and the extracted electron mobility-lifetime product of this thin-film device is 6.6 × 10–7 cm2·V−1. This study allows us to extract the minority carrier decay length and to obtain the mobility-lifetime product which can be used to evaluate the performance of 2D carrier transport devices.

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Section: Resultscontrasting

confidence: 57%

Minority carrier decay length extraction from scanning photocurrent profiles in two-dimensional carrier transport structures

Wei

Chu

Mao

2021

Sci Rep

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“…The measured diffusion lengths are in good agreement with the values reported in the literature for GaAs 4 and Ga 0.47 In 0.53 As. 5,6 In order to gain insight into these trends, one must investigate the nature of these diffusion lengths. This increase in diffusion length can be a result of an increase in lifetime, an increase in mobility, or both.…”

Section: Resultsmentioning

confidence: 99%

“…Minority carrier diffusion length, lifetime and mobility are the most crucial parameters for electrical simulation and design of minority carrier devices. The diffusion lengths of Ga (1-x) In x As lattice matched to GaAs and InP [4][5][6] and also the lifetime of minority carriers 7,8 have both been studied extensively. These have been found to depend on several factors, including the band structure of the material, the crystal and chemical purity, as well as alloy scattering, doping, and the overall injection level.…”

Section: Introductionmentioning

confidence: 99%

Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs

Niemeyer

Ohlmann

Walker

et al. 2017

Journal of Applied Physics

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Minority carrier diffusion lengths and lifetimes were determined for p-type Ga(1-x)InxAs with an In-content of 0 ≤ x ≤ 0.53 by cathodoluminescence and time-resolved photoluminescence measurements respectively under low injection conditions; the resulting minority carrier mobilities are also reported. Highly p-doped samples (3 × 1018 cm−3) demonstrate a constant minority carrier diffusion length of (5.0 ± 0.7) μm and a constant lifetime of (3.7 ± 0.7) ns for an In-content up to 21%. Lower doped samples (3 × 1017 cm−3), on the other hand, show an increase in minority carrier diffusion length and lifetime with In-content from (6.3 ± 0.2) μm and (6.2 ± 0.5) ns respectively for GaAs to (14 ± 2) μm and (24.4 ± 0.5) ns respectively for Ga0.79In0.21As. Increasing the In-content to 53% results in a drop in the minority carrier diffusion length independently of the p-doping concentration .This is interpreted as a change in the energy of the Shockley-Read-Hall trap levels within the bandgap as a function of indium concentration

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“…Information on minority-carrier lifetime and diffusion length is available for Ga x In 1Àx P y As 1Ày quaternary [48][49][50]. The minority-carrier lifetime and diffusion length in Ga x In 1Àx As y Sb 1Ày have [38].…”

Section: Iii-v Semiconductor Quaternary Alloymentioning

confidence: 99%

Carrier Transport Properties

Adachi

2009

Properties of Semiconductor Alloys

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Minority carrier diffusion lengths in liquid phase epitaxial InGaAsP and InGaAs

Cited by 14 publications

References 14 publications

Minority carrier decay length extraction from scanning photocurrent profiles in two-dimensional carrier transport structures

Minority carrier decay length extraction from scanning photocurrent profiles in two-dimensional carrier transport structures

Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs

Carrier Transport Properties

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