J. Electrochem. Soc.
 1981
DOI: 10.1149/1.2127533
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Minority Carrier Diffusion Length EBIC Measurements in Cadmium Telluride

P. Gaugash
1
,
A. G. Milnes
2

Abstract: not Available.

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Cited by 6 publications
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“…6 and 7). (Gaugash and Milnes 1981, Gautron and Lemasson 1982, Sieber 1985. Other parameters are as in fig.…”
Section: : ;mentioning
confidence: 99%

Ebic contrast of defects in cadmium telluride. II. Theory

Sieber
1
1987
Philosophical Magazine B
12
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1
0
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“…6 and 7). (Gaugash and Milnes 1981, Gautron and Lemasson 1982, Sieber 1985. Other parameters are as in fig.…”
Section: : ;mentioning
confidence: 99%

Ebic contrast of defects in cadmium telluride. II. Theory

Sieber
1
1987
Philosophical Magazine B
12
0
1
0
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Growth of Semiconductor Materials

Pizzini1
2015
Physical Chemistry of Semiconductor Materials and Processes
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ChemInform Abstract: MINORITY CARRIER DIFFUSION LENGTH EBIC MEASUREMENTS IN CADMIUM TELLURIDE

Gaugash1,
Milnes2
1981
Chemischer Informationsdienst
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