Ebic contrast of defects in cadmium telluride. II. Theory

Sieber, Brigitte

doi:10.1080/13642818708218346

Cited by 12 publications

(1 citation statement)

References 8 publications

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“…The induced current profiles obtained at different accelerating voltages suggest that the minority carrier lifetime inside the defect is longer than in the region surrounding it. The dependence of the EBIC contrast of this defect on the accelerating voltage is non-monotonous and is shifted towards higher accelerating voltages as compared to that of another precipitate B and of a subboundary C. It should be mentioned that for dislocations in CdTe the maxima in the contrast dependence on the beam energy were obtained to depend on the relation between the recombination efficiencies inside and outside the depletion region of a Schottky diode [11,12].…”

Section: Fig4 Rebic Images Of An Unidentified Defect At 300k (A) Anmentioning

confidence: 99%

EBIC INVESTIGATIONS OF EXTENDED DEFECTS IN CdTe

Panin

Yakimov

1991

J. Phys. IV France

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Section: Fig4 Rebic Images Of An Unidentified Defect At 300k (A) Anmentioning

confidence: 99%

EBIC INVESTIGATIONS OF EXTENDED DEFECTS IN CdTe

Panin

Yakimov

1991

J. Phys. IV France

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A Simple Derivation of the Influence of the Depletion Zone on the EBIC Collection Efficiency

Mekki

Tarento

Tabet

1992

Phys. Stat. Sol. (a)

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A simple derivation of the EBIC collection efficiency is proposed to take account of the recombination in the depletion zone which is characterized by an effective recombination velocity for carriers generated in the neutral zone and an Hecht collection efficiency for carriers produced in the depleted zone. The new model is checked with experimental results and is in agreement with a rigorous model.

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Cathodoluminescence evidence of the relative position of As(g) and Ga(g) dislocation-related energy bands in gallium arsenide

Sieber¹,

Farvacque²,

Miri³

1993

Phys. Stat. Sol. (a)

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Cathodoluminescence contrast experiments are performed in the range 87 to 350 K on As(g) and Ga(g) dislocations introduced by means of microhardness indentations in p‐type bulk gallium arsenide. The experimental results are interpreted by a model which assumes the recombination properties of the dislocation to be the results of the dislocation radial electrical field. It is found, in agreement with previous EBIC contrast studies of dislocations in n‐type GaAs, that the energy band related to the As(g) dislocation is closer to the top of the valence band than that related to the Ga(g) dislocation.

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Ebic contrast of defects in cadmium telluride. II. Theory

Cited by 12 publications

References 8 publications

EBIC INVESTIGATIONS OF EXTENDED DEFECTS IN CdTe

EBIC INVESTIGATIONS OF EXTENDED DEFECTS IN CdTe

A Simple Derivation of the Influence of the Depletion Zone on the EBIC Collection Efficiency

Cathodoluminescence evidence of the relative position of As(g) and Ga(g) dislocation-related energy bands in gallium arsenide

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