1985
DOI: 10.1063/1.96220
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Minimizing dc drift in LiNbO3 waveguide devices

Abstract: Improved stability against electrical dc bias drift has been demonstrated in LiNbO3 electro-optic modulators by replacing the commonly used SiO2 buffer layer with indium tin oxide (ITO), a transparent conductor. The long term drift of the modulators having an ITO buffer layer with a sheet resistivity of ∼20 Ω/⧠ is less than 0.3% in 8 h. The mechanism of the dc drift phenomenon is discussed using an electrical equivalent circuit model of the modulator.

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Cited by 50 publications
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“…2 (b) and the dips in Figs. 2(c) and 2(d) is attributed to dc drift associated with the buffer layer (SiO 2 ) [26,27]. Here the dc drift has been depressed a lot by etching a groove on the SiO 2 buffer layer as shown in the inset of Fig.…”
mentioning
confidence: 97%
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“…2 (b) and the dips in Figs. 2(c) and 2(d) is attributed to dc drift associated with the buffer layer (SiO 2 ) [26,27]. Here the dc drift has been depressed a lot by etching a groove on the SiO 2 buffer layer as shown in the inset of Fig.…”
mentioning
confidence: 97%
“…1(a). The dc drift can be further minimized by replacing SiO 2 with a transparent conductive buffer layer such as indium tin oxide [27].…”
mentioning
confidence: 99%
“…1. objectives (6). The introduction of a prismatic glass plate (5) in front of the input objective ensures the simultaneous excitation of two neighbouring channel waveguides.…”
Section: Methodsmentioning
confidence: 99%
“…Several attempts have been made to eliminate or suppress DC-drift effects, e.g. by sputter etching the surface of the LiNbO3 sample [33J, by using a conducting silicon buffer layer [34] or by using the transparent but conducting indium tin oxide (ITO) material as buffer layer or directly as electrode material [35,36]. These means have shown satisfactory results, as far as crosstalk levels of about -20 dB are tolerable.…”
Section: <0010mentioning
confidence: 98%