2006
DOI: 10.1017/s1431927606065457
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Minimization of Ga Induced FIB Damage Using Low Energy Clean-up

Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

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Cited by 93 publications
(56 citation statements)
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“…It is reasonable to assume that Ga ion implantation took place into the top surface of the cut area. For Ga ions at 30 keV, the implantation depth is 50 nm [40]. Still, the periodicity was clearly maintained even in the thin sections.…”
Section: Resultsmentioning
confidence: 93%
“…It is reasonable to assume that Ga ion implantation took place into the top surface of the cut area. For Ga ions at 30 keV, the implantation depth is 50 nm [40]. Still, the periodicity was clearly maintained even in the thin sections.…”
Section: Resultsmentioning
confidence: 93%
“…The specimens were extracted from the surface of the bulk material by standard FIB lift-out procedures, deposited on a commercial Si tip array and then sharpened to tip radii of <100 nm, followed by a cleaning procedure as described by Thompson [30] and analyzed by APT. APT characterization was conducted on a LEAP 3000X HR instrument (Cameca), at a base temperature of 70 ± 4 K, operated in laser-pulsed mode (wavelength 532 nm; pulse repetition rate: 200 kHz) with 0.2 nJ pulse energy in a voltage range starting from 4 kV.…”
Section: Methodsmentioning
confidence: 99%
“…This quantification is possible due to the final 2 kV final cleaning of lamella to minimize the incorporation of gallium to side wells. The literature data concerning simulations of Ga atoms implantation shows that during FIB cleaning at 5 kV, the penetration depth into silicon is about 4 nm, with maximum atomic concentration of 2 at.% [11,12]. Thus, in the case of performing 2 kV final cleaning, implantation of gallium can be neglected for EDS quantification when 30-50 nm lamella is used.…”
Section: Nw Cross-section By Fib Sectioning Methodsmentioning
confidence: 99%