2007
DOI: 10.1002/pssr.200701171
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Miniaturized TEG with thermal generation of free carriers

Abstract: The rising interest in low temperature heat energy conversion encourages the application of thermoelectric devices. However, conventional thermoelectric devices used in the Seebeck mode as thermoelectric generators have several shortcomings and thus are inefficient when used as a generator. Additionally, the high cost–power ratio of these modules anticipates the commercial success on a broad basis. One way to achieve better suited products is provided by miniaturization of thermoelectric devices in order to en… Show more

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Cited by 34 publications
(21 citation statements)
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References 5 publications
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“…Furthermore, applying higher temperatures T h directly leads to an enhancement of the efficiency. Originally, the architecture has been proposed by G. Span and subsequent simulations have focused on thin film devices .…”
Section: Devicesmentioning
confidence: 99%
“…Furthermore, applying higher temperatures T h directly leads to an enhancement of the efficiency. Originally, the architecture has been proposed by G. Span and subsequent simulations have focused on thin film devices .…”
Section: Devicesmentioning
confidence: 99%
“…Consequently, quantum well is preferable to thermoelectric applications in the range of a > 8 nm. SiGe quantum well of thickness from 20 nm to 100 nm as often seen in SiGe base can be uniformly grown by UHV-CVD epitaxy technique [14].…”
Section: Quantum Well-like Layer In Cmos Processmentioning
confidence: 99%
“…al. 6 , wherein the hot-side p-metal-n junction in a TE is replaced by a p-n junction and electron generation events supply the TE current. They proposed that the TV can slightly exceed the limiting TE efficiency.…”
Section: Introductionmentioning
confidence: 99%