Miniaturized III‐Nitride Asymmetric Optical Link for the Monitoring of Vascular Heart Rate and Cardiac‐Related Pulse Activity

Ye, Ziqi; Yan, Jiabin; Gao, Xumin; Jia, Bolun; Guan, Qı; Fu, Kang; Wang, Linning; Zhu, Hongbo; Ji, Xiangyang; Wang, Yongjin

doi:10.1002/adem.202100829

Cited by 8 publications

(4 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The epitaxial layers on the sapphire substrate include an AlN buffer layer, an unintentional-doped GaN layer, an N-doped GaN layer, an InGaN/GaN MQW layer, and a p-GaN layer from the bottom to the top. The fabrication step of the photonic chip is similar to our previous work 30 . First, a transparent indium tin oxide (ITO) current spreading layer is deposited via sputtering.…”

Section: Methodsmentioning

confidence: 99%

Miniature optical fiber curvature sensor via integration with GaN optoelectronics

Shi

Zhang

et al. 2022

Commun Eng

Self Cite

View full text Add to dashboard Cite

Optical fiber curvature sensors have been considered as a promising option for human motion detection due to its good toughness, bending flexibility and anti-electromagnetic interference. However, for wearable devices, the miniature configuration is preferred, and a high integration of the light emitter, receiver and guided fiber is essential to configure the miniaturized sensing system. Here, we present a miniaturized curvature sensing system by integrating a GaN-based optoelectronic chip with the plastical optical fiber (POF). The light emitter and detector are fabricated on a GaN-on-sapphire wafer to form a tiny chip sized at 2.5 $$\times$$ × 1.5 mm2. The on-chip photodetector (PD) effectively senses the reflected light intensity, extracting information on the fiber bending deformation. A compact curvature sensing system is demonstrated for finger motion detection with movement angles of 30–90° and frequencies of 0.4, 1, and 1.6 Hz. The results show that the monolithically integrated LED and PD chip can be combined with the POF with reliable operation. The demonstration of the monolithically integrated optoelectronic device suggests a promising potential technology for future wearable fiber optical sensor system.

show abstract

Section: Methodsmentioning

confidence: 99%

Miniature optical fiber curvature sensor via integration with GaN optoelectronics

Shi

Zhang

et al. 2022

Commun Eng

Self Cite

View full text Add to dashboard Cite

show abstract

“…Light-emitting diodes (LEDs) are highly energy-efficient and long-lasting, making them ideal for various applications such as indoor and outdoor lighting. − With the advantage of ultralow energy consumption, self-driven photodetectors (PDs) are the indispensable devices in various applications, such as optical communications, remote sensing, industrial automation, and environmental monitoring . Self-driven nanotechnology aims at building a self-driven system that operates independently, sustainably and wirelessly .…”

Section: Introductionmentioning

confidence: 99%

“… 1 − 3 With the advantage of ultralow energy consumption, self-driven photodetectors (PDs) are the indispensable devices in various applications, such as optical communications, remote sensing, industrial automation, and environmental monitoring. 4 Self-driven nanotechnology aims at building a self-driven system that operates independently, sustainably and wirelessly. 5 In general, the dual functions of photoemission and detection are operated by two separate devices of LED and PD rather than a single monolithic device, which requires additional power supply equipment, making the system more cumbersome and expensive.…”

Section: Introductionmentioning

confidence: 99%

Flexible Monolithic Bifunctional Device Based on a Lift-off (In,Ga)N Film for Both Lighting and Self-Driven Detection

Hou,

Zhang,

Zhang

et al. 2024

ACS Omega

View full text Add to dashboard Cite

Although flexible monolithic bifunctional devices are significant for next-generation optoelectronic devices, it is quite challenging to realize them. In this work, a flexible monolithic device with both functions of emission and self-driven detection has been proposed and demonstrated successfully. By a quick electrochemical etching method, the device is created using a liftoff (In,Ga)N film detaching from the epitaxial silicon substrate. The Si removal is beneficial for releasing stress and reducing the internal polarization effects under bending conditions, keeping the electroluminescence peak wavelength quite stable. With good flexibility, the monolithic bifunctional device can maintain both stable detection and emission performance under bending conditions. Furthermore, two functions of detection and lighting of the flexible monolithic device can not only be realized separately but also simultaneously. This means that the flexible monolithic device can detect and emit light at the same time. With the advantages of miniaturization and multifunctionality, this work paves an effective way to develop new monolithic multifunctional devices for both self-driven detection and wearable intelligent display.

show abstract

“…By adjusting the Indium (In) component, the energy bandgap of (In,Ga)N can be modulated from 0.67 eV (InN) to 3.4 eV (GaN), which covers the whole visible range [ 4 ]. (In,Ga)N can also be an excellent candidate for fabricating photodetectors (PDs) because of its high stability and direct and tunable bandgap, which can be applied in the systems of medical, communication and environmental monitoring [ 5 , 6 , 7 , 8 ]. In the conventional way, the dual functionalities of light emission and detection can be realized by combining a LED and a PD, which makes the system more cumbersome and expensive [ 9 , 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection

Dai

Zhou

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

Due to the emerging requirements of miniaturization and multifunctionality, monolithic devices with both functions of lighting and detection are essential for next-generation optoelectronic devices. In this work, based on freestanding (In,Ga)N films, we demonstrate a monolithic device with two functions of lighting and self-powered detection successfully. The freestanding (In,Ga)N film is detached from the epitaxial silicon (Si) substrate by a cost-effective and fast method of electrochemical etching. Due to the stress release and the lightening of the quantum-confined Stark effect (QCSE), the wavelength blueshift of electroluminescent (EL) peak is very small (<1 nm) when increasing the injection current, leading to quite stable EL spectra. On the other hand, the proposed monolithic bifunctional device can have a high ultraviolet/visible reject ratio (Q = 821) for self-powered detection, leading to the excellent detection selectivity. The main reason can be attributed to the removal of Si by the lift-off process, which can limit the response to visible light. This work paves an effective way to develop new monolithic multifunctional devices for both detection and display.

show abstract

Miniaturized III‐Nitride Asymmetric Optical Link for the Monitoring of Vascular Heart Rate and Cardiac‐Related Pulse Activity

Cited by 8 publications

References 38 publications

Miniature optical fiber curvature sensor via integration with GaN optoelectronics

Miniature optical fiber curvature sensor via integration with GaN optoelectronics

Flexible Monolithic Bifunctional Device Based on a Lift-off (In,Ga)N Film for Both Lighting and Self-Driven Detection

Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection

Contact Info

Product

Resources

About