Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection

Abstract

Due to the emerging requirements of miniaturization and multifunctionality, monolithic devices with both functions of lighting and detection are essential for next-generation optoelectronic devices. In this work, based on freestanding (In,Ga)N films, we demonstrate a monolithic device with two functions of lighting and self-powered detection successfully. The freestanding (In,Ga)N film is detached from the epitaxial silicon (Si) substrate by a cost-effective and fast method of electrochemical etching. Due to the stress release and the lightening of the quantum-confined Stark effect (QCSE), the wavelength blueshift of electroluminescent (EL) peak is very small (<1 nm) when increasing the injection current, leading to quite stable EL spectra. On the other hand, the proposed monolithic bifunctional device can have a high ultraviolet/visible reject ratio (Q = 821) for self-powered detection, leading to the excellent detection selectivity. The main reason can be attributed to the removal of Si by the lift-off process, which can limit the response to visible light. This work paves an effective way to develop new monolithic multifunctional devices for both detection and display.

Flexible Monolithic Bifunctional Device Based on a Lift-off (In,Ga)N Film for Both Lighting and Self-Driven Detection

“…When we bend the (In,Ga)N film and then apply a forward bias, the same curved energy band state can slow down the carrier transport (Figure f), resulting in a decrease in the luminous power of the device (Figure b). Moreover, the removal of the epitaxial Si substrate by the EC method is beneficial for releasing stress, leading to reduce the internal polarization effects . Hence, the EL peak wavelength can remain quite stable under bending conditions (Figure a).…”

“…Moreover, the removal of the epitaxial Si substrate by the EC method is beneficial for releasing stress, leading to reduce the internal polarization effects. 28 Hence, the EL peak wavelength can remain quite stable under bending conditions (Figure 4a).…”

Flexible light-stimulated artificial synapse based on detached (In,Ga)N thin film for neuromorphic computing

“…On the other hand, stable persistent photoconductivity (PPC) effects can be observed in GaN-based materials, which have the advantages of low-energy consumption, long lifetime and small volume, etc [11,12]. In the previous works, photo-stimulated synaptic devices are fabricated based on GaN-based materials successfully [13,14].…”