Miniaturization of a broadband power divider for X-band application based on GaAs technology

Abstract

In this letter, a miniaturized broadband power divider with novel configuration is proposed. Coplanar transmission lines of CPW and cascaded two sections of coupled ACPSs are utilized to achieve broadband performance. MIM capacitors are loaded at each ends of the ACPSs to realize size‐reduction along with ground equalization. Design equations are given in detail. The occupied area is about 3.5 × 0.6 mm2 and a significant size reduction of 61% is achieved. The fabrication process of this power divider with coplanar transmission lines is compatible with GaAs MMIC process. Broadband performance and perfect impedance matching are revealed by the measured results that the return loss S11 and S22 are both lower than −15 dB across the entire X‐band, 8–12 GHz. Good isolation and dividing properties are obtained with S23 better than −10 dB and S21 around −3.5 dB. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:1427–1431, 2017

Compact filtering power divider for mm‐wave applications using integrated passive device technology

“…Other researchers have developed FPDs using substrate integrated waveguides (SIW) [10][11][12][13][14] or low-temperature cofired ceramic (LTCC), 15 which show low insertion loss with decent frequency response, but the circuit/device is large, which is unsuitable for compact system-in-package (SiP) and integrated RF systems. Standalone power dividers and filters based on complementary metaloxide-semiconductor (CMOS), SiGe or GaAs technologies usually have significantly miniaturized footprint [16][17][18][19] but show large insertion loss, and further performance degradation is expected during device interconnection. 20,21 Also, the cost of semiconductor processes is still considered expensive compared to other packaging technologies.…”

Design and Development of Compact Wilkinson Power Divider on Gallium Nitride Coplanar Technology

“…In the literature, the inductive/capacitive loaded lumped elements, T-and 𝜋-type equivalent circuits, open circuit stubs, resonators, tapered transmission lines, high impedance and step impedance multilayer structures have been investigated for microstrip technology to overcome miniaturization issues [5][6][7][8][9][10][11][12]. In addition, these miniaturization techniques have been applied with utilizing multi-layer printed circuit board, low temperature co-fired ceramics (LTCC), III-V semiconductor integrated passive device (IPD) process [13][14]. Nevertheless, the WPD with coplanar waveguide (CPW) technology becomes a notable choice to microstrip WPD by dint of having low manufacturing complexity, no via holes and low-loss [15].…”

Ultra wideband lumped Wilkinson power divider on gallium arsenide integrated passive device technology

“…COMS integration process is often used in the design of power divider chips, but its insertion loss is relatively large 10 . However, performances of References 11–12, which use the gallium arsenide (GaAs) integrated passive device (IPD) process to design WPD in insertion loss ( IL ) and that the pass bandwidth should be improved. Transmission lines are added in the resistor and transformers in Reference 13.…”