Ultra wideband lumped Wilkinson power divider on gallium arsenide integrated passive device technology

Abstract

In this letter, a novel lumped Wilkinson power divider (WPD) introducing capacitors on the isolation R of ultra wideband with good isolation and insertion loss (IL) performance is proposed with the help of gallium arsenide (GaAs) technology. With the even and odd method, the proposed WPD is better illustrated. The fractional bandwidth (FBW) is 104% (3-9.5 GHz). Besides, the return loss is better than 13.7 dB, and the IL is better than 0.62 dB within the passband. The isolation is better than 19.5 dB from 3 to 9.5 GHz. Finally, to better illustrate the design conception, it has been fabricated on GaAs integrated passive device technology with size of 1.37 Â 0.971 mm 2 , that is, 0.1 Â 0.072 λ g 2 , measured by on-wafer probing. All the final results of the proposed WPD are reasonably matched well.

Design and Development of Compact Wilkinson Power Divider on Gallium Nitride Coplanar Technology

“…In the literature, the inductive/capacitive loaded lumped elements, T-and 𝜋-type equivalent circuits, open circuit stubs, resonators, tapered transmission lines, high impedance and step impedance multilayer structures have been investigated for microstrip technology to overcome miniaturization issues [5][6][7][8][9][10][11][12]. In addition, these miniaturization techniques have been applied with utilizing multi-layer printed circuit board, low temperature co-fired ceramics (LTCC), III-V semiconductor integrated passive device (IPD) process [13][14]. Nevertheless, the WPD with coplanar waveguide (CPW) technology becomes a notable choice to microstrip WPD by dint of having low manufacturing complexity, no via holes and low-loss [15].…”