Miniaturised X‐band balanced microwave limiter based on thin film hybrid integrated circuit technology

Abstract

On the basis of thin film hybrid integrated circuit technology, a miniaturised X‐band balanced microwave limiter with low insertion loss (IL), low spike and flat leakage power and short recovery time has been presented. The balanced circuit configuration improves the power capacity of the PIN diodes, provides the absorptive load for the reflected power and also effectively tackles the problem of suffering high incident power. The measured results show that the balanced microwave limiter could suffer a pulse with 150 W peak power and 3% duty ratio while the leakage power is <10 mW, and the small signal IL of the circuit is <1.4 dB in the frequency range from 8.8 to 9.8 GHz.

Investigation of microwave power limiter for Industrial Scientific Medical band (ISM) applications

“…By using the conversion from ABCD matrix to scattering matrix, the S ‐parameters ( S 11 and S 21 ) of the circuit are expressed in the following equations: …”

“…To achieve a radiofrequency power limiter, many scientific researches have been proposed for the design of power limiters based on PIN diodes, Schottky diodes, and MESFET transistors. The utilization of semiconductor diodes for limiting microwave power has been recently discussed in several published studies . Depending on the chosen diode components, the power limiters can be grouped as passive and active limiters.…”