MIM capacitors model determination and analysis of parameter influence

Characterization of Si3N4 Metal-Insulator-Metal (MIM) Capacitors for Monolithic Microwave Integrated Circuits (MMIC) Applications

“…6 (b)), the capacitance showed increment as the dimension increases. This further strengthens the fact that the parasitic effect is dominant at low frequency because at high frequency, slow parasitic carriers cannot response to the high frequency changes [8][9][10], therefore the capacitance obtained increases as been stated in Equation (1). On the other hand, the grounding of the devices during measurement would also cause the parasitic effect to be dominant.…”

“…Test capacitors should also be included on the wafer for in-process verification [1,2]. One attribute of the capacitance reduces as the frequency increases is due to slow carriers respond time at high frequency resulting no capacitance obtained [8,9] Thus, capacitance dropped as the frequency increases. In addition, the trend of the graphs also signifies that high attenuation of the capacitance at high frequency as the capacitance is practically near to zero, which is the natural phenomenon.…”

“…On the other hand, the grounding of the devices during measurement would also cause the parasitic effect to be dominant. Since the capacitors were fabricated without via-hole grounding, therefore the parasitic effect is significant and quantifies [8][9][10]. Results of preliminary experimental fabrication and characterization of Si3N4 MIM capacitor was presented.…”

MIM CAPACITOR SIMPLE SCALABLE MODEL DETERMINATION FOR MMIC APPLICATION ON GaAs

“…There have been a number of publications on the approximate model of MIM capacitors in the past tens of years [3][4][5][6][7]. However, detailed formulas on equivalent circuit models used in computer-aided design (CAD) programs are rarely disclosed.…”