Millimeter-wave Ti:LiNbO/sub 3/ optical modulators

Noguchi, K.; Mitomi, O.; Miyazawa, H.

doi:10.1109/50.664072

Cited by 281 publications

(88 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In clear contrast, the benchmark LiNbO 3 modulators boast 20 dB or better modulation depth (the industry standard for digital communications) [142] and 40 Gb/s or higher bit rates are commonplace in commercial long-haul telecom systems, giving a figure of merit of at least 800 dB.Gbs -1 . Up to 100 GHz modulation bandwidth has been measured in LiNbO 3 with careful RF design of travelingwave electrodes as early as 1998 [143], hence even higher modulation depth times bit rates are feasible in principle, the complications of detection and electronic circuitry for modulation and detection notwithstanding.…”

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

“…In EO modulators, this shortcoming leads to large device cross-sections (widths of several microns) and consequently large V π .L of 10-20 V.cm depending on modulation frequency and characteristic impedance [143,153]. Indeed, for current very high-speed applications, the frequency response of LiNbO 3 modulators is limited by the long lengths of the electrodes, thus using travellingwave electrodes becomes essential [142,143]. Large crosssection waveguides also imply the need for high-power sources to achieve high optical density for the onset of optically-induced χ (2) nonlinearity.…”

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

“…Also, single-crystalline LiNbO 3 has large EO coefficients (r 33 = ≈31 pm/V and r 13 = 8 pm/V) and a wide transparency range (0.4-5 μm wavelength) [152]. Indeed, standard LiNbO 3 waveguides are widely regarded as the best vehicle for EO modulation in the photonic industry [142] with impressively high modulation bandwidths (over 100 GHz [143]). As mentioned before, LiNbO 3 modulators undoubtedly offer higher performance (in terms of modulation bandwidth and modulation depth) compared to Sibased optical modulators.…”

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

“…Any of these processes can only slightly alter the refractive index of the material, i.e., the index contrast of the obtained stripe waveguides is rather small (0.1-0.2) and hence the guided modes are weakly confined. In EO modulators, this shortcoming leads to large device cross-sections (widths of several microns) and consequently large V π .L of 10-20 V.cm depending on modulation frequency and characteristic impedance [143,153]. Indeed, for current very high-speed applications, the frequency response of LiNbO 3 modulators is limited by the long lengths of the electrodes, thus using travellingwave electrodes becomes essential [142,143].…”

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

See 3 more Smart Citations

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

View full text Add to dashboard Cite

Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

show abstract

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

See 2 more Smart Citations

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

View full text Add to dashboard Cite

show abstract

“…Moreover, an additional external modulator is indispensable to up-conversion of a baseband signal into a radio-on-fiber signal. To use a wideband optical modulator [3] is an alternative way but its modulation frequency and conversion efficiency is limited.…”

Section: Introductionmentioning

confidence: 99%

Amplitude modulation on millimeter-wave signal with low driving voltage using reciprocating optical modulator

Sakamoto

Kawanishi

Shinada

et al. 2005

IEICE Electron. Express

View full text Add to dashboard Cite

Abstract:A reciprocating optical modulator (ROM) generates a millimeter-wave signal in good efficiency. Internal bias modulation on a ROM is reported, in this paper. Owing to reciprocating modulation in the ROM, the driving voltage required for amplitude modulation on a millimeter-wave signal is highly decreased. In this paper, a millimeterwave signal in the 52.8-GHz frequency band is amplitude-modulated with a low-voltage (2.0 V) baseband signal, where half-wave voltage of the modulator embedded in the ROM is 6.4 V.

show abstract