Millimeter-Wave Receivers with Subharmonic Pump

McMaster, T.F.; Schneider, M.V.; Snell, W.W.

doi:10.1109/tmtt.1976.1129005

Cited by 37 publications

(4 citation statements)

References 5 publications

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“…14,15 The diodes are thermocompression-bonded to millimeter-wave thin-film circuits in either the orthomode double balanced down-con verter (four diodes) 16 or the half-frequency pumped down-converter (two diodes). [17][18][19] Typical diodes selected for these circuits have a total ca pacitance at zero volts less than 0.08 pF and an excess series resistance (ΔSF). calculated from the dc forward-bias junction characteristics, less than 8 Ω.…”

Section: Semiconductor Devices 2127mentioning

confidence: 99%

WT4 Millimeter Waveguide System: Semiconductor Devices for the WT4 Repeater

Dunn¹,

Petersen²,

Redline³

1977

Bell System Technical Journal

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Design, fabrication, performance, and reliability information is provided for three types of millimeter-wave diodes developed to operate over the 40-110 GHz WT4 band. A family of silicon I MP ATT diodes generate the transmitter and local-oscillator power. These diodes use an ion-implanted double drift impurity profile. A hermetically sealed package was developed to achieve high reliability. A diamond heat sink provides a low thermal resistance. A silicon PIN subnanosecond switching diode phase modulates the transmitted power. The passivated mesa of the PIN diode chip is fabricated from thin, high-resistivity epitaxial material to achieve low capacitance and fast switching. A gallium arsenide Schottky-barrier mixer diode down-converts the signal in the receiver. The beam-lead Schottky diode is fabricated using mo lecular beam epitaxy, which provides a novel junction-isolation tech nique. Also, a brief description is given of the salient features of other active devices which operate in the IF (1.371 GHz) and baseband (dc to 300 MHz) circuitry. They consist of a family of both transistors and diodes (step recovery device, PIN variolosser, and Schottky mixer).

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Section: Semiconductor Devices 2127mentioning

confidence: 99%

WT4 Millimeter Waveguide System: Semiconductor Devices for the WT4 Repeater

Dunn¹,

Petersen²,

Redline³

1977

Bell System Technical Journal

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“…Therefore it is meaningful to develop low conversion loss subharmonic mixers. The development of subharmonic mixers have a long history from earlier crossed waveguide configuration to recently hybrid integrated and monolithic configuration, from earlier one diode to recently antiparallel diodes subharmonic mixers [1][2][3][4][5][6][7][8][9][10][11][12][13]. Most of the published papers concentrated on the work of 2th and 4th subharmonic mixers.…”

Section: Introductionmentioning

confidence: 99%

An Improved Architecture of Sixth Subharmonic Mixers in E-Band

Yao

2008

Int J Infrared Milli Waves

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An improved architecture of sixth subharmonic mixers is proposed in this paper. In order to meet the need of low conversion loss, antiparallel diodes are selected and the length of four open/shorted microstrip stubs at both sides of the antiparallel diodes are carefully designed. For any important idle frequency components which can't be reused by the four stubs, reactive terminations are presented by adjusting the length of main RF and LO microstrip. The tested results indicate the lowest conversion loss is 26.1 dB at the radio frequency of 72 GHz, with fixed LO at 12 GHz. The proposed circuit architecture is suitable for the implementation of subharmonic mixers in E-band as well as other millimeter and submillimeter-wave regions where high quality and high frequency LOs are difficult to realize.

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] Most of the published papers concentrated on the work of low conversion loss, high isolation and low-order SH mixers. To the best of our knowledge, there are few published references on high-order and wide dynamic range SH mixers.…”

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confidence: 99%

A Novel Circuit Architecture for High Performance of High-order Subharmonic Mixers

Yao

2008

Int J Infrared Milli Waves

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A novel circuit architecture for high performance of high-order subharmonic (SH) mixers is proposed in this paper. According to the specified harmonic mixing order, one or more mixer diodes sub-arrays and corresponding power divider as well as phase shift network for RF and LO signals are arranged in the circuit. This proposed SH mixer circuit has improved conversion loss, wide dynamic range and high port isolation for high-order SH mixers. By phase cancellation of idle frequencies, the proposed SH mixer circuit can eliminate complicated design procedure of idle frequency circuits; by phase cancellation of leakage LO power to RF and IF port, and leakage RF power to LO port, the mixer circuit can get high port isolation in LO-IF/RF and RF-LO. The increased antiparallel diode pairs in each sub-array will also lead to well performance by lowering effective series resistance. The proposed SH mixer circuit can be easily realized with power divider and phase shift network for RF and LO signals.

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Millimeter-Wave Receivers with Subharmonic Pump

Cited by 37 publications

References 5 publications

WT4 Millimeter Waveguide System: Semiconductor Devices for the WT4 Repeater

WT4 Millimeter Waveguide System: Semiconductor Devices for the WT4 Repeater

An Improved Architecture of Sixth Subharmonic Mixers in E-Band

A Novel Circuit Architecture for High Performance of High-order Subharmonic Mixers

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