An Improved Architecture of Sixth Subharmonic Mixers in E-Band

Yao, Changfei; Xu, Ji

doi:10.1007/s10762-008-9331-3

Cited by 9 publications

(6 citation statements)

References 16 publications

(14 reference statements)

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“…Figure 8 shows the conversion loss, nonlinearity at 86 GHz, and LO isolation. The conversion loss of the 2nd/4th SHP mixer is observed as 11 dB to 13/16 dB to 18 dB, and the conversion loss of the 6th SHP mixer in a similar structure is 26 dB [13]. We can predict that the conversion loss increases by about 6 dB as the order of the SHP mixer doubles.…”

Section: Design and Fabrication Of 4th Shp Mixermentioning

confidence: 78%

E-Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process

Kim¹

2012

ETRI J

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In this paper, the implementations of a 0.1 µm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single‐chip receiver for 70/80 GHz point‐to‐point communications are presented. To obtain high‐gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five‐stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five‐stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of –1.5 dBm to 1.5 dBm. Finally, a single‐chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of –21 dBm.

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Section: Design and Fabrication Of 4th Shp Mixermentioning

confidence: 78%

E-Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process

Kim¹

2012

ETRI J

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“…To the idle frequencies reused by band stop filters, reactive load can be realized by designing phase shift networks between band stop filters and antiparallel diode pair. [20] Numerical simulation for a Ka-band 8th SH mixer is demonstrated for our proposed architecture and general architecture. According to our analysis of SH mixer architecture in Fig.…”

Section: Discussion and Numerical Simulationmentioning

confidence: 99%

A Novel Circuit Architecture for High Performance of High-order Subharmonic Mixers

Yao

2008

Int J Infrared Milli Waves

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A novel circuit architecture for high performance of high-order subharmonic (SH) mixers is proposed in this paper. According to the specified harmonic mixing order, one or more mixer diodes sub-arrays and corresponding power divider as well as phase shift network for RF and LO signals are arranged in the circuit. This proposed SH mixer circuit has improved conversion loss, wide dynamic range and high port isolation for high-order SH mixers. By phase cancellation of idle frequencies, the proposed SH mixer circuit can eliminate complicated design procedure of idle frequency circuits; by phase cancellation of leakage LO power to RF and IF port, and leakage RF power to LO port, the mixer circuit can get high port isolation in LO-IF/RF and RF-LO. The increased antiparallel diode pairs in each sub-array will also lead to well performance by lowering effective series resistance. The proposed SH mixer circuit can be easily realized with power divider and phase shift network for RF and LO signals.

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“…where b is the height of the WR-28 waveguide, w is the output microstrip width, and L is the finline taper length. A mode transducer in the form of a semicircle is used to complete the transition, which is designed so that any resonance is shifted to a frequency outside the operation band [7] . The transition structure is presented in Fig.…”

Section: Wg-finline-microstrip Transitionmentioning

confidence: 99%

Design of Ka-band antipodal finline mixer and detector

Yao

Chen

2009

J. Semicond.

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This paper mainly discusses the analysis and design of a finline single-ended mixer and detector. In the circuit, for the purpose of eliminating high-order resonant modes and improving transition loss, metallic via holes are implemented along the mounting edge of the substrate embedded in the split-block of the WG-finline-microstrip transition. Meanwhile, a Ka band slow-wave and bandstop filter, which represents a reactive termination, is designed for the utilization of idle frequencies and operation frequencies energy. Full-wave analysis is carried out to optimize the input matching network of the mixer and the detector circuit using lumped elements to model the nonlinear diode. The exported S -matrix of the optimized circuit is used for conversion loss and voltage sensitivity analysis. The lowest measured conversion loss is 3.52 dB at 32.2 GHz; the conversion loss is flat and less than 5.68 dB in the frequency band of 29-34 GHz. The highest measured zero-bias voltage sensitivity is 1450 mV/mW at 38.6 GHz, and the sensitivity is better than 1000 mV/mW in the frequency band of 38-40 GHz.

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An Improved Architecture of Sixth Subharmonic Mixers in E-Band

Cited by 9 publications

References 16 publications

E-Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process

E-Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process

A Novel Circuit Architecture for High Performance of High-order Subharmonic Mixers

Design of Ka-band antipodal finline mixer and detector

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An Improved Architecture of Sixth Subharmonic Mixers in E-Band

Cited by 9 publications

References 16 publications

E-Band Wideband MMIC Receiver Using 0.1 &micro;m GaAs pHEMT Process

E-Band Wideband MMIC Receiver Using 0.1 &micro;m GaAs pHEMT Process

A Novel Circuit Architecture for High Performance of High-order Subharmonic Mixers

Design of Ka-band antipodal finline mixer and detector

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Product

Resources

About

E-Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process

E-Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process