Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz

SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

“…For this purpose, high frequency noise measurement (>110 GHz) are crucial for the characterization of integrated circuit designs in the mmW range. Among important issues for noise characterization at such high frequency range is the commercial availability of the noise source [15]. Thus, a HF noise source with an adequate output noise power level is required to perform such characterization.…”

“…Noise sources are usually characterized in terms of the Excess Noise Ratio (ENR), which is defined as the generated noise level above the thermal noise floor. A noise measurement setup was reported consisting of a silicon-based diode noise source, a noise receiver and a noise figure meter (NFM) [15], [16]. The output noise power of the diode was measured in two states; P hoc when the diode source is reverse biased near the avalanche region, and P cold when the diode source is in the OFF state.…”

“…The output noise power of the diode was measured in two states; P hoc when the diode source is reverse biased near the avalanche region, and P cold when the diode source is in the OFF state. After extracting the noise figure of the noise receiver using cryogenic Hot/Cold measurements [15], [16], the Excess noise ratio of the noise source was then extracted using Y-method. The integrated diode noise source achieved a tunable ENR level up to 20 dB in the 130 GHz to 325 GHz frequency range as shown in Fig.…”

“…To test the potentiality of the noise measurements setup, the ENR was extracted for several biasing currents (1 mA up to 7 mA) for several diode sizes as described in [16]. Moreover, the noise source was used to extract the NF of active devices (Packaged LNA) up to 260 GHz [15]. Beyond this initial proof of concept of silicon-noise source the electrical model of this noise source was also developed in [16].…”

Temperature Compensated Internal LNA Noise Calibration Source

“…The avalanche noise diode is commonly used for the noise source design [12][13][14][15][16]. We selected a Noisecom NC302L because of its relatively low avalanche voltage (less than +8 V) and beam lead packaging convenient for integration into an LNA [17].…”