Millimeter-wave measurement of complex permittivity using dielectric rod resonator excited by NRD-guide

Nakayama, Akira; Fukuura, A.; Nishimura, M.

doi:10.1109/tmtt.2002.806932

Cited by 20 publications

(12 citation statements)

References 12 publications

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“…6 The values of ε and tan δ are determined using the TE 0m1 (m = 1, 2, 3) mode resonator. The TE 0m1 mode resonator allows us to achieve stable measurements, and accurate and simple calculations for ε and tan δ by analytic expression.…”

Section: Introductionmentioning

confidence: 99%

Permittivity measurements at millimeter wave frequencies using dielectric rod resonator excited by NRD-guide

Nakayama

Yoshikawa

2006

Journal of the European Ceramic Society

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Section: Introductionmentioning

confidence: 99%

Permittivity measurements at millimeter wave frequencies using dielectric rod resonator excited by NRD-guide

Nakayama

Yoshikawa

2006

Journal of the European Ceramic Society

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“…On the other hand, the use of a dielectric waveguide in the nonradiative configuration evidences low coupling efficiency, at least for a circular resonator operating on the fundamental modes, as experimentally verified. In addition, a useful excitation setup on the basis of these derices requires transition regions with suitable profiles, in order to reduce the stationary waves in the circuit to acceptable levels [22].…”

Section: Preliminary Measurementsmentioning

confidence: 99%

A nonradiative approach to single-mode dielectric resonators

et al. 2003

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The development of a single-mode dielectric resonator specifically designed for high-frequency paramagnetic resonance applications is discussed. The use of dielectric resonators is expected to give better performances in comparison to metallic cavities, as well established at low frequency. The relatively low dielectric constant of the common good-quality materials at high frequency requires the presence of a metallic shielding in order to obtain ah efficient single-mode operation. The configuration proposed in this paper concems a partially open structure in which the confinement of the radiation is guaranteed by the forbidden propagation around the dielectric region. By this way a single-mode resonator can be obtained for arbitrary values of the employed dielectrie constant. The complex resonance frequencies and the field distributions of the proposed nonradiative device are obtained in terms of the complex permittivity of the resonator and of the finite conductivity of the employed conductors. The actual field distribution and intensity can then be obtained even in the presence of a lossy sample. An efficient excitation scheme, fully compatible with the common electron paramagnetic resonance setups, has been developed exploiting the nonradiative nature of the proposed device. Preliminary measurements around 90 and 186 GHz have been then successfully realized. Finally, the specific benefits of the proposed resonator have been discussed and compared with the performances of a conventional metallic cavity.

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“…Another significant drawback to complete on-chip system integration is the high losses and low self-resonant frequencies of the passive circuitry surrounding the active transistors on the semiconductor die [26] at mmwave frequencies, an effect exacerbated by nearfield interaction between the on-chip passive and the host substrate after mounting [27]. Typical unloaded quality factors (Qfactors) for on-chip resonators at E-band frequencies have been demonstrated only up to 83 [28] for compound transmission line resonators, 43 for shielded transmission line resonators [29], 25 for single transmission line resonators [30] and below 15 for LC tank resonators [31]. This compares poorly with achievable unloaded Q-factors at mm-wave frequencies of over 200 in SIW [32], over 3,000 for ceramic dielectric resonators [30] and Q-factors in excess of 75,000 for machined waveguide resonators [33].…”

Section: Approachesmentioning

confidence: 99%

“…Typical unloaded quality factors (Qfactors) for on-chip resonators at E-band frequencies have been demonstrated only up to 83 [28] for compound transmission line resonators, 43 for shielded transmission line resonators [29], 25 for single transmission line resonators [30] and below 15 for LC tank resonators [31]. This compares poorly with achievable unloaded Q-factors at mm-wave frequencies of over 200 in SIW [32], over 3,000 for ceramic dielectric resonators [30] and Q-factors in excess of 75,000 for machined waveguide resonators [33]. E-band system integration with off-the-shelf components traditionally makes use of pre-packaged components in WR-12 rectangular waveguide [34] [35].…”

Section: Approachesmentioning

confidence: 99%

A review of key development areas in low-cost packaging and integration of future E-band mm-wave transceivers

Stander

2015

Africon 2015

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Abstract-With an ever increasing number of broadband applications in sub-Saharan Africa, mm-wave point-to-point networking has the potential to fill a niche in communications network architectures. Widespread adoption of this technology would benefit from conventional RF soft substrate integration and packaging, as opposed to system-on-chip or thick film processes. A review on the state-of-the-art in E-band soft substrate systems reveals significant reliance on MMICs. We propose that hybrid integration of active devices with off-chip passives, as well as better integration of active components in SIW, will lead to better performing E-band systems in soft substrates. Specific enabling techniques from the microwave domain are identified.

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Millimeter-wave measurement of complex permittivity using dielectric rod resonator excited by NRD-guide

Cited by 20 publications

References 12 publications

Permittivity measurements at millimeter wave frequencies using dielectric rod resonator excited by NRD-guide

Permittivity measurements at millimeter wave frequencies using dielectric rod resonator excited by NRD-guide

A nonradiative approach to single-mode dielectric resonators

A review of key development areas in low-cost packaging and integration of future E-band mm-wave transceivers

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